公开(公告)号：US20090224282A1

公开(公告)日：2009-09-10

申请号：US12093758

申请日：2006-11-14

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40

摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer.The inventive gallium nitride-based compound semiconductor light-emitting device comprises an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer which are formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.

摘要翻译： 本发明的目的是提供一种具有低驱动电压和高发光输出的氮化镓基化合物半导体发光器件，其具有包括与p型直接接触的透明导电层的正极 半导体层。 本发明的氮化镓系化合物半导体发光元件包括在基板上依次形成的n型半导体层，发光层和p型半导体层，其中，各层包含氮化镓系化合物半导体发光元件， 所述发光装置的负极和正极分别设置在所述n型半导体层和所述p型半导体层上，所述正极至少部分地由透明导电膜形成 透明导电膜至少部分地与p型半导体层接触，在透明导电膜的半导体侧表面上存在含有III族金属成分的半导体金属混合层， 半导体金属混合层为0.1〜10nm。

公开(公告)号：US07544974B2

公开(公告)日：2009-06-09

申请号：US11660040

申请日：2005-08-23

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： An object of the present invention is to provide a positive electrode, in which the silver is used, for a compound-semiconductor light-emitting device high in inverse voltage and excellent in stability and productivity.The inventive positive electrode for a compound-semiconductor light-emitting device comprises a reflective layer of a silver alloy.

摘要翻译： 本发明的目的是提供一种其中使用银的正电极，用于具有高反向电压和优异的稳定性和生产率的化合物半导体发光器件。 本发明的化合物半导体发光装置用正极包括银合金的反射层。

公开(公告)号：US20090124739A1

公开(公告)日：2009-05-14

申请号：US12065779

申请日：2006-09-05

申请人： Toshiyuki Matsumoto ,  Tsuyoshi Oda ,  Koji Kamei ,  Toshiya Iwasaki

发明人： Toshiyuki Matsumoto ,  Tsuyoshi Oda ,  Koji Kamei ,  Toshiya Iwasaki

IPC分类号： C08K5/04 ,  C08L67/06

CPC分类号： C09D17/001 ,  C09D11/322

摘要： The present invention relates to a process for producing a water-based pigment dispersion which includes a first step of mixing (A) an emulsion composition including a water-insoluble polymer having a specific weight-average molecular weight and containing a salt-forming group, an organic solvent having a specific solubility in water, a neutralizing agent and water, with (B) a pigment to obtain a preliminary dispersion having a content of non-volatile components of from 5 to 50% by weight and a weight ratio of the organic solvent to water [organic solvent/water] of from 0.1 to 0.9; a second step of continuously dispersing the preliminary dispersion by using a media-type dispersing device and continuously separating the resultant dispersion from media particles; and a third step of further dispersing the resultant dispersion by using a homogenizer, as well as a water-based ink for ink-jet printing containing the water-based pigment dispersion which not only satisfies a high optical density but also exhibits excellent gloss and rubbing resistance.

摘要翻译： 水性颜料分散体的制造方法技术领域本发明涉及一种水性颜料分散体的制造方法，该方法包括：（A）包含具有特定重均分子量且含有成盐基团的水不溶性聚合物的乳液组合物的第一步骤， 在水中具有特定溶解度的有机溶剂，中和剂和水，（B）颜料，得到非挥发成分含量为5〜50重量％的预分散体和有机物的重量比 溶剂与水[有机溶剂/水]为0.1〜0.9; 通过使用介质型分散装置连续分散预分散液并将所得分散体与介质颗粒连续分离的第二步骤; 以及通过使用均化器进一步分散所得分散体的第三步骤，以及用于喷墨印刷的水性油墨，其含有水性颜料分散体，其不仅满足高的光密度，而且还表现出优异的光泽和摩擦 抵抗性。

公开(公告)号：US07452740B2

公开(公告)日：2008-11-18

申请号：US10581751

申请日：2004-12-08

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L21/00 ,  H01L21/44

CPC分类号： H01L21/28575 ,  H01L33/32 ,  H01L33/40

摘要： A gallium nitride-based compound semiconductor light-emitting device which includes an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively; wherein the negative electrode includes a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of Cr or a Cr alloy and formed through sputtering.

摘要翻译： 一种氮化镓系化合物半导体发光装置，其包括氮化镓系化合物半导体的n型半导体层，氮化镓系化合物半导体的发光层和p型半导体层 氮化镓基化合物半导体依次形成在基板上，分别具有设置在n型半导体层和p型半导体层上的负极和正极; 其中所述负极包括接合焊盘层和与所述n型半导体层接触的接触金属层，并且所述接触金属层由Cr或Cr合金构成并通过溅射形成。

公开(公告)号：US20070200129A1

公开(公告)日：2007-08-30

申请号：US10593288

申请日：2005-04-28

申请人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

发明人： Munetaka Watanabe ,  Noritaka Muraki ,  Koji Kamei ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42

摘要： An object of the present invention is to provide a positive electrode having high transparency, low contact resistance and excellent current diffusibility and not requiring electron beam irradiation, high-temperature annealing or heat treatment, for alloying, in an oxygen atmosphere. The inventive transparent positive electrode for gallium nitride-based compound semiconductor light-emitting devices comprises a contact metal layer in contact with a p-type semiconductor layer, a current diffusing layer on the contact metal layer, the current diffusing layer having an electrical conductivity larger than that of the contact metal layer, and a bonding pad layer on the current diffusing layer.

摘要翻译： 本发明的目的是提供一种在氧气氛中具有高透明度，低接触电阻和优异的电流扩散性，并且不需要电子束照射，高温退火或热处理用于合金化的正极。 本发明的氮化镓系化合物半导体发光元件用透明正极包括与p型半导体层接触的接触金属层，接触金属层上的电流扩散层，电导率较大的电流扩散层 比接触金属层的厚度以及电流扩散层的接合焊盘层。

公开(公告)号：US08093605B2

公开(公告)日：2012-01-10

申请号：US11997624

申请日：2006-07-27

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/405 ,  H01L2933/0016

摘要： A gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer of gallium nitride-based compound semiconductors which are formed in this order on a substrate, the negative electrode and the positive electrode being provided in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively. The positive electrode includes a first electrode and an over-coating layer covering the side surfaces and upper surface of the first electrode, and the area where the over-coating layer comes into contact with the p-type semiconductor layer is greater at the corner portions of the positive electrode than at the side portions thereof, per unit length of the outer edge of the first electrode.

摘要翻译： 氮化镓基化合物半导体发光器件包括在衬底上依次形成的氮化镓基化合物半导体的n型半导体层，发光层和p型半导体层，负极 电极和正极分别与n型半导体层和p型半导体层接触。 正极包括覆盖第一电极的侧面和上表面的第一电极和覆盖层，并且覆盖层与p型半导体层接触的区域在拐角部分较大 比第一电极的外边缘的每单位长度的正极侧。

公开(公告)号：US07952116B2

公开(公告)日：2011-05-31

申请号：US12776502

申请日：2010-05-10

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40

摘要： The present disclosure relates to a gallium nitride-based compound semiconductor light-emitting device with low driving voltage and high light emission output, which has a positive electrode comprising a transparent electrically conducting layer put into direct contact with a p-type semiconductor layer. An embodiment of the disclosure includes a gallium nitride-based compound semiconductor light-emitting device, which includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, which may be formed in this order on a substrate, wherein each layer comprises a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and a region having a semiconductor metal concentration of 20 at. % or more, based on all metals, is present in the transparent electrically conducting film on the semiconductor side surface of the transparent electrically conducting film.

摘要翻译： 本公开涉及具有低驱动电压和高发光输出的氮化镓基化合物半导体发光器件，其具有包括与p型半导体层直接接触的透明导电层的正极。 本公开的一个实施方案包括氮化镓基化合物半导体发光器件，其包括可以在衬底上依次形成的n型半导体层，发光层和p型半导体层 其中，每个层包括氮化镓基化合物半导体，所述发光器件具有设置在所述n型半导体层上的负极和正电极以及半导体金属浓度为20atm的区域。 在透明导电膜的半导体侧表面上的透明导电膜中存在基于所有金属的％以上。

公开(公告)号：US07741653B2

公开(公告)日：2010-06-22

申请号：US12093758

申请日：2006-11-14

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L31/12

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/40

摘要： A gallium nitride-based compound semiconductor light-emitting device having an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed in this order on a substrate. Each layer includes a gallium nitride-based compound semiconductor, the light-emitting device has a negative electrode and a positive electrode provided on the n-type semiconductor layer and on the p-type semiconductor layer, respectively, the positive electrode is at least partially formed of a transparent electrically conducting film, the transparent electrically conducting film is at least partially in contact with the p-type semiconductor layer, a semiconductor metal mixed layer containing a Group III metal component is present on the semiconductor side surface of the transparent electrically conducting film, and the thickness of the semiconductor metal mixed layer is from 0.1 to 10 nm.

摘要翻译： 具有在衬底上依次形成的n型半导体层，发光层和p型半导体层的氮化镓系化合物半导体发光元件。 每个层包括氮化镓基化合物半导体，发光器件分别具有设置在n型半导体层和p型半导体层上的负极和正极，正电极至少部分地 由透明导电膜形成，透明导电膜至少部分地与p型半导体层接触，在透明导电膜的半导体侧表面上存在含有III族金属成分的半导体金属混合层 膜，半导体金属混合层的厚度为0.1〜10nm。

公开(公告)号：US07518163B2

公开(公告)日：2009-04-14

申请号：US10582913

申请日：2004-12-16

申请人： Koji Kamei

发明人： Koji Kamei

IPC分类号： H01L27/15

CPC分类号： H01L21/28575 ,  H01L33/32 ,  H01L33/40

摘要： A gallium nitride-based compound semiconductor light-emitting device is disclosed which includes an n-type semiconductor layer of a gallium nitride-based compound semiconductor, a light-emitting layer of a gallium nitride-based compound semiconductor and a p-type semiconductor layer of a gallium nitride-based compound semiconductor formed on a substrate in this order, and has a negative electrode and a positive electrode provided on the n-type semiconductor layer and the p-type semiconductor layer, respectively. The negative electrode includes a bonding pad layer and a contact metal layer which is in contact with the n-type semiconductor layer, and the contact metal layer is composed of a Cr—Al alloy.

摘要翻译： 公开了一种氮化镓系化合物半导体发光元件，其包括氮化镓系化合物半导体的n型半导体层，氮化镓系化合物半导体的发光层和p型半导体层 形成在基板上的氮化镓基化合物半导体，分别具有设置在n型半导体层和p型半导体层上的负极和正极。 负极包括接合焊盘层和与n型半导体层接触的接触金属层，并且接触金属层由Cr-Al合金构成。

公开(公告)号：US20080315237A1

公开(公告)日：2008-12-25

申请号：US11597413

申请日：2005-05-19

申请人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

发明人： Koji Kamei ,  Munetaka Watanabe ,  Noritaka Muraki ,  Yasushi Ohno

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： This gallium nitride-based compound semiconductor light emitting device includes an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer that are composed of gallium nitride-based compound semiconductors and are deposited in that order on a substrate, and further includes a negative electrode and a positive electrode that are in contact with the n-type semiconductor layer and the p-type semiconductor layer, respectively, wherein the positive electrode has a translucent electrode composed of a three-layer structure including a contact metal layer that contacts at least the p-type semiconductor layer, a current diffusion layer provided on the contact metal layer and having conductivity greater than that of the contact metal layer, and a bonding pad layer provided on the current diffusion layer, and a mixed positive electrode-metal layer including a metal that forms the contact metal layer is present in a positive electrode side surface of the p-type semiconductor layer.

摘要翻译： 该氮化镓系化合物半导体发光元件包括由氮化镓系化合物半导体构成的n型半导体层，发光层和p型半导体层，并依次沉积在基板上， 并且还包括分别与n型半导体层和p型半导体层接触的负极和正极，其中所述正极具有由包括接触金属的三层结构构成的透光性电极 至少与p型半导体层接触的层，设置在接触金属层上并具有大于接触金属层的导电性的电流扩散层，以及设置在电流扩散层上的接合焊盘层，以及混合正极 包含形成接触金属层的金属的电极 - 金属层存在于p型半导体的正极侧表面上 导体层。