公开(公告)号：US20150206716A1

公开(公告)日：2015-07-23

申请号：US14601878

申请日：2015-01-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： HYUNGJOON KIM ,  Vasily Pashkovskiy ,  Sang-Heon Lee ,  Sang-Jean Jeon ,  Doug-Yong Sung ,  Yun-Kwang Jeon ,  Bong-Seong Kim

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/505

CPC classification number: H01J37/32146 ,  C23C16/515 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32183

Abstract: A plasma generating apparatus includes a chamber that encloses a reaction space that is isolated from the outside; a wafer chuck disposed in a lower portion of the chamber; a plasma generation unit disposed in an upper portion of the chamber; a first radio-frequency (RF) power source that supplies RF power to the plasma generation unit; a first matching unit interposed between the first RF power source and the plasma generation unit; a second RF power source that supplies RF power to the wafer chuck; and a second matching unit interposed between the second RF power source and the wafer chuck. The first RF power source supplies a first pulse power level and a different second pulse power level at different times.

Abstract translation: 等离子体发生装置包括：室，其包围与外部隔离的反应空间; 设置在所述室的下部的晶片卡盘; 设置在所述室的上部的等离子体产生单元; 向所述等离子体发生单元提供RF功率的第一射频（RF）电源; 介于所述第一RF电源和所述等离子体产生单元之间的第一匹配单元; 向晶片卡盘提供RF功率的第二RF电源; 以及插入在第二RF电源和晶片卡盘之间的第二匹配单元。 第一RF电源在不同时间提供第一脉冲功率电平和不同的第二脉冲功率电平。