公开(公告)号：US20150157955A1

公开(公告)日：2015-06-11

申请号：US14537318

申请日：2014-11-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong-Jhin CHO ,  Jung-Min OH ,  Yongmyung JUN ,  Yongsun KO ,  Kuntack LEE ,  Hyosan LEE

IPC: B01D3/00

CPC classification number: H01L21/02101 ,  H01L21/02057

Abstract: A method of purifying a cleaning agent is provided. The method includes heating a first mixed solution including an etching agent, a first cleaning agent, and a second cleaning agent at or below a first temperature and distilling the etching agent and the first cleaning agent and removing the second cleaning agent. The method includes condensing or compressing the etching agent and the first cleaning agent forming a second mixed solution including the etching agent and the first cleaning agent. The method includes heating the second mixed solution at a temperature lower than a second temperature, redistilling the etching agent and extracting the first cleaning agent. The second temperature is lower than the first temperature.

Abstract translation: 提供一种净化剂的净化方法。 该方法包括在第一温度或低于第一温度下加热包括蚀刻剂，第一清洁剂和第二清洁剂的第一混合溶液，并蒸馏蚀刻剂和第一清洁剂并除去第二清洁剂。 该方法包括冷凝或压缩蚀刻剂和第一清洗剂，形成包括蚀刻剂和第一清洁剂的第二混合溶液。 该方法包括在低于第二温度的温度下加热第二混合溶液，重新分配蚀刻剂并提取第一清洁剂。 第二个温度低于第一个温度。

公开(公告)号：US20130183824A1

公开(公告)日：2013-07-18

申请号：US13733506

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungho KWON ,  Kuntack LEE ,  Yongsun KO ,  Hongjin KIM ,  Sangwon BAE ,  Sigyung AHN ,  Jun-Youl YANG ,  Sol HAN ,  Bo yun KIM ,  Myung-Ki HONG

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/02074 ,  H01L21/76861

Abstract: A method of fabricating a semiconductor device includes forming a first layer including a first metal, forming a second layer including a second metal, the second layer being adjacent to the first layer, polishing top surfaces of the first and second layers, and cleaning the first and second layers using a cleaning solution. The cleaning solution may include an etching solution etching the first and second layers and an inhibitor suppressing the second layer from being over etched.

Abstract translation: 制造半导体器件的方法包括形成包括第一金属的第一层，形成包括第二金属的第二层，第二层邻近第一层，抛光第一层和第二层的顶表面，以及清洁第一层 和使用清洁溶液的第二层。 清洁溶液可以包括蚀刻溶液，蚀刻第一和第二层以及抑制第二层的抑制剂被过蚀刻。