公开(公告)号：US20180190697A1

公开(公告)日：2018-07-05

申请号：US15692244

申请日：2017-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： GWI-DEOK RYAN LEE ,  TAEYON LEE

IPC: H01L27/146 ,  H01L27/148 ,  H01L31/062

CPC classification number: H01L27/14609 ,  H01L27/14603 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/14893 ,  H01L31/062

Abstract: An image sensor may include a substrate including a plurality of unit pixel regions and having first and second surfaces facing each other. Each of the unit pixel regions may include a plurality of floating diffusion parts spaced apart from each other in the substrate, storage nodes provided in the substrate to be spaced apart from and facing the floating diffusion parts, a transfer gate adjacent to a region between the floating diffusion parts and the storage nodes, and photoelectric conversion parts sequentially stacked on one of the first and second surfaces. Each of the photoelectric conversion parts may include common and pixel electrodes respectively provided on top and bottom surfaces thereof and each pixel electrode may be electrically connected to a corresponding one of the storage nodes.

公开(公告)号：US20180061873A1

公开(公告)日：2018-03-01

申请号：US15499333

申请日：2017-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： TAEYON LEE ,  Gwideokryan Lee ,  Myungwon Lee

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14643

Abstract: Semiconductor devices are provided. The semiconductor devices may include a substrate, a device isolation pattern in the substrate to electrically isolate a first pixel and a second pixel from each other, a conductive pattern in the device isolation pattern, and a doping layer on a side surface of the device isolation pattern. The doping layer may have a conductivity type different from a conductivity type of the substrate.