公开(公告)号：US20220172926A1

公开(公告)日：2022-06-02

申请号：US17443535

申请日：2021-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Wan Kim ,  Beom Rae Kim ,  Dong Hyeon Na ,  Young Jin Noh ,  Seung Bo Shim ,  Sang-Ho Lee ,  Yong Woo Lee ,  Jun Ho Lee ,  Dong Hee Han

IPC: H01J37/32

Abstract: A method for fabricating a semiconductor device includes providing a wafer on a lower electrode inside a plasma processing apparatus. A first power having a first and second frequency is provided to the lower electrode. A second power is provided to an RF induction electrode through the lower electrode. A third power having the second frequency is released outside of a chamber. A plasma process is performed on the wafer while the third power is released. The RF induction electrode is disposed inside an insulating plate surrounding a sidewall of the lower electrode. The RF induction electrode is spaced apart front the lower electrode. The RF induction electrode has an annular shape surrounding the sidewall of the lower electrode. The first power is controlled by a first controller, and the third power is controlled by a second controller different from the first controller.