Semiconductor device
    12.
    发明授权

    公开(公告)号:US11139199B2

    公开(公告)日:2021-10-05

    申请号:US16420328

    申请日:2019-05-23

    Abstract: A semiconductor device including a semiconductor substrate including a chip region and an edge region around the chip region; a lower dielectric layer and an upper dielectric layer on the semiconductor substrate; a redistribution chip pad that penetrates the upper dielectric layer on the chip region and is connected a chip pad; a process monitoring structure on the edge region; and dummy elements in the edge region and having an upper surface lower than an upper surface of the upper dielectric layer.

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