公开(公告)号：US20210043561A1

公开(公告)日：2021-02-11

申请号：US16877088

申请日：2020-05-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： YEONGGIL KIM ,  Jongmin Baek ,  Wookyung You ,  Kyuhee Han

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/528

Abstract: A semiconductor device includes a contact structure connected to an active region. A first insulating layer is disposed on a barrier dielectric layer and has a first hole connected to the contact structure. A second insulating layer is disposed on the first insulating layer and has a trench connected to the first hole. The second insulating layer has an extended portion along a side wall of the first hole. A width of the first hole less the space occupied by the extended portion is defined as a second hole. A wiring structure including a conductive material is connected to the contact structure. A conductive barrier is disposed between the conductive material and the first and second insulating layers. An etch stop layer is disposed between the first and second insulating layers and between the extended portion of the second insulating layer and a side wall of the first hole.

公开(公告)号：US10381461B2

公开(公告)日：2019-08-13

申请号：US15649996

申请日：2017-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Namjin Cho ,  Yeontae Kim ,  Keesoo Park ,  Eunsok Choi ,  Kyuhee Han

IPC: C23C16/455 ,  H01L29/66

Abstract: A method of forming a semiconductor device includes: loading a wafer onto a susceptor, wherein the susceptor is disposed inside a chamber; heating the inside of the chamber; and rotating the susceptor, and first forming a film on the wafer by outputting a reactive gas and a carrier gas from an injector disposed at a sidewall of the chamber to form a semiconductor device having a first layer, wherein the first layer is manufactured under a first condition, wherein the injector includes a first outlet exposed within the chamber to discharge the carrier gas directly into the chamber and a second outlet exposed within the chamber to discharge the reactive gas directly into the chamber, wherein the first outlet is disposed below the second outlet.

公开(公告)号：US20170317188A1

公开(公告)日：2017-11-02

申请号：US15649996

申请日：2017-07-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： NAMJIN CHO ,  Yeontae Kim ,  Keesoo Park ,  Eunsok Choi ,  Kyuhee Han

IPC: H01L29/66 ,  C23C16/455

CPC classification number: H01L29/66742 ,  C23C16/455 ,  C23C16/45519 ,  C23C16/45563 ,  C23C16/45574

Abstract: A thin film forming apparatus includes: an injector, the injector including: a distributor including a first distribution portion connected to a first gas inlet, and a second distribution portion connected to a second gas inlet; and a guide connected to the distributor, the guide including a first outlet connected to the first distribution portion, and a second outlet connected to the second distribution portion, wherein the second outlet is disposed above the first outlet.