公开(公告)号：US20220173143A1

公开(公告)日：2022-06-02

申请号：US17518756

申请日：2021-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kook Tae KIM ,  Miseon PARK ,  Soojin HONG

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface, a second surface opposite to the first surface, and unit pixels, a deep device isolation portion disposed in the substrate to isolate the unit pixels from each other, and a transfer gate disposed on the first surface and in each of the unit pixels. The deep device isolation portion includes a first conductive pattern extending from the first surface toward the second surface, a first insulating pattern interposed between the first conductive pattern and the substrate, a second conductive pattern extending from the second surface toward the first conductive pattern, and a first fixed charge layer interposed between the second conductive pattern and the substrate.

公开(公告)号：US20200219911A1

公开(公告)日：2020-07-09

申请号：US16655762

申请日：2019-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Sung HUR ,  Jin Gyun KIM ,  Kook Tae KIM ,  Young Bin LEE ,  Ha Jin LIM ,  Taek Soo JEON ,  Soo Jin HONG

IPC: H01L27/146

Abstract: An image sensor may include a substrate including first and second surfaces opposite each other, a plurality of photoelectric conversion devices isolated from direct contact with each other within the substrate, a first trench configured to extend into an interior of the substrate from the first surface of the substrate and between adjacent photoelectric conversion devices of the plurality of photoelectric conversion devices, a first supporter within the first trench, and a first isolation layer at least partially covering both sidewalls of the first supporter within the first trench, wherein a lower surface of the first supporter is coplanar with the first surface of the substrate.