公开(公告)号：US20150243727A1

公开(公告)日：2015-08-27

申请号：US14708423

申请日：2015-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Yeon Park ,  Jae-Hyoung Choi ,  Vladimir Urazaev ,  Jin-Ha Jeong

IPC: H01L49/02 ,  H01L27/108

CPC classification number: H01L27/1085 ,  H01L21/283 ,  H01L21/311 ,  H01L21/76802 ,  H01L27/108 ,  H01L27/10852 ,  H01L28/60 ,  H01L28/92

Abstract: Provided are semiconductor devices and methods of fabricating the same. The methods may include forming a molding layer on a semiconductor substrate. A storage electrode passing through the molding layer is formed. A part of the storage electrode is exposed by partially etching the molding layer. A sacrificial oxide layer is formed by oxidizing the exposed part of the storage electrode. The partially-etched molding layer and the sacrificial oxide layer are removed. A capacitor dielectric layer is formed on the substrate of which the molding layer and the sacrificial oxide layer are removed. A plate electrode is formed on the capacitor dielectric layers.

Abstract translation: 提供半导体器件及其制造方法。 所述方法可以包括在半导体衬底上形成模塑层。 形成通过成形层的存储电极。 存储电极的一部分通过部分蚀刻成型层而露出。 通过氧化存储电极的暴露部分形成牺牲氧化物层。 去除部分蚀刻的成型层和牺牲氧化物层。 在其上移除成型层和牺牲氧化物层的基板上形成电容器电介质层。 在电容器电介质层上形成平板电极。