公开(公告)号：US20220069161A1

公开(公告)日：2022-03-03

申请号：US17227538

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Junhee CHOI ,  Nakhyun KIM ,  Dongho KIM ,  Joohun HAN

IPC: H01L33/14 ,  H01L33/04 ,  H01L33/56 ,  H01L27/15 ,  H01L33/00

Abstract: A nanorod light-emitting device is provided. The nanorod light-emitting device includes a first semiconductor layer, a light-emitting layer on the first semiconductor layer, a second semiconductor layer disposed on the light-emitting layer, at least one conductive layer disposed between a central portion of a lower surface of the light-emitting layer and the first semiconductor layer, or between a central portion of an upper surface of the light-emitting layer and the second semiconductor layer, at least one current blocking layer that surrounds a side surface of the at least one conductive layer, and an insulating film that surrounds a side surface of the second semiconductor layer, a side surface of the light-emitting layer, and a side surface of the at least one current blocking layer.

公开(公告)号：US20200176426A1

公开(公告)日：2020-06-04

申请号：US16593635

申请日：2019-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyoung AHN ,  Junhee CHOI ,  Kyungwook HWANG ,  Jinjoo PARK

IPC: H01L25/13 ,  H01L33/10 ,  H01L33/50 ,  H01L33/38 ,  H01L33/22

Abstract: A display device includes a substrate, an emission layer provided on the substrate and a reflective layer provided on the emission layer. The emission layer has an emission region that emits light, the reflective layer has a first opening, the emission region overlaps the first opening in a direction perpendicular to an upper surface of the substrate and a first width of the emission region is smaller than a second width of the first opening.

公开(公告)号：US20240038820A1

公开(公告)日：2024-02-01

申请号：US18085806

申请日：2022-12-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo PARK ,  Joosung KIM ,  Younghwan PARK ,  Dongchul SHIN

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32

CPC classification number: H01L27/156 ,  H01L33/08 ,  H01L33/06 ,  H01L33/32

Abstract: A light-emitting device includes a base semiconductor layer, a three-dimensional (3D) light-emitting structure, and a flat light-emitting structure formed in a flat shape, wherein the flat light-emitting structure generates light having a different wavelength than that of the 3D light-emitting structure. A strain-relieving layer relieving lattice mismatch between the base semiconductor layer and the flat light-emitting structure may be arranged on the base semiconductor layer in an area in which at least the flat light-emitting structure is formed.

公开(公告)号：US20230317768A1

公开(公告)日：2023-10-05

申请号：US18308895

申请日：2023-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joohun HAN ,  Junhee CHOI ,  Kiho KONG ,  Jinjoo PARK ,  Nakhyun KIM ,  Junghun PARK

IPC: H01L27/15 ,  H01L33/00

CPC classification number: H01L27/156 ,  H01L33/0093 ,  H01L33/0095 ,  H01L33/007

Abstract: A micro light emitting diode (LED) device and a method of manufacturing the same are provided. A micro LED device includes a light emitting layer that is provided on a support substrate, a bonding layer, and a driver layer. The light emitting layer includes a stacked structure including a first semiconductor layer, an active layer, and a second semiconductor layer; first and second electrodes provided on a first side and a second side of the stacked structure; and a plurality of light emitting regions. The bonding layer is positioned between the support substrate and the light emitting layer. The drive layer includes a drive element electrically connected to the light emitting layer and is positioned on the light emitting layer to apply power to the plurality of light emitting regions of the light emitting layer.

公开(公告)号：US20230062456A1

公开(公告)日：2023-03-02

申请号：US17982164

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Jinjoo PARK ,  Junhee Choi ,  Kiho Kong ,  Joohun Han ,  Nakhyun Kim ,  Junghun Park

IPC: H01L29/778 ,  H01L29/66 ,  H01L27/12 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region adjacent to the first region, the first and the second regions being disposed in a first direction parallel to an upper surface of the substrate; an etch-stop layer disposed on the first region and the second region; a separation layer disposed on an upper portion of the etch-stop layer, the separation layer being disposed on the first region; a high-electron-mobility transistor (HEMT) element disposed on an upper portion of the separation layer in a second direction perpendicular to an upper surface of the substrate; a light-emitting element disposed on the second region between the substrate and the etch-stop layer; and a plurality of first insulating patterns covering side surfaces of the HEMT element, the plurality of first insulating patterns extending to the etch-stop layer.

公开(公告)号：US20220246092A1

公开(公告)日：2022-08-04

申请号：US17725935

申请日：2022-04-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Nakhyun KIM ,  Junghun PARK ,  Jinjoo PARK ,  Joohun HAN

IPC: G09G3/32 ,  H01L27/15 ,  H01L33/10 ,  H01L33/34

Abstract: Provided is a display apparatus including a plurality of subpixels and configured to emit light based on each of the plurality of subpixels, the display apparatus including a substrate, a driving layer provided on the substrate and including a driving element which is configured to apply current to the display apparatus, a first electrode electrically connected to the driving layer, a first semiconductor layer provided on the first electrode, an active layer provided on the first semiconductor layer, a second semiconductor layer provided on the active layer, a second electrode provided on the second semiconductor layer, and a reflective layer provided on the second semiconductor layer, wherein light emitted from the active layer resonates between the first electrode and the reflective layer.

公开(公告)号：US20220109022A1

公开(公告)日：2022-04-07

申请号：US17227981

申请日：2021-04-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junhee CHOI ,  Kiho KONG ,  Nakhyun KIM ,  Dongho KIM ,  Junghun PARK ,  Jinjoo PARK ,  Eunsung LEE ,  Joohun HAN

IPC: H01L27/15

Abstract: A micro light-emitting display apparatus and a method of manufacturing the same are disclosed The micro light-emitting display apparatus includes a first semiconductor layer, an isolation structure provided on the first semiconductor layer and configured to define a plurality of sub-pixels each configured to emit light, a first light-emitting unit including a first active layer provided in a first sub-pixel among the plurality of sub-pixels, and a second semiconductor layer provided on the first active layer, and a second light-emitting unit including a rod semiconductor layer provided in a second sub-pixel among the plurality of sub-pixels, a second active layer provided on the rod semiconductor layer, and a third semiconductor layer provided on the second active layer. The first active layer is configured to emit blue light and the second active layer is configured to emit green light.

公开(公告)号：US20210091279A1

公开(公告)日：2021-03-25

申请号：US16842933

申请日：2020-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kiho KONG ,  Junhee CHOI ,  Jinjoo PARK ,  Joohun HAN

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15

Abstract: A semiconductor device includes a substrate including a first region and a second region that are arranged in a first direction that is parallel to an upper surface of the substrate; a separation layer provided on the first region of the substrate; a high electron mobility transistor (HEMT) device overlapping the separation layer in a second direction that is perpendicular to the upper surface of the substrate; a light-emitting device provided on the second region of the substrate; and a first insulating pattern covering a side surface of the HEMT device, wherein the first insulating pattern overlaps the separation layer in the second direction.