公开(公告)号：US20230063171A1

公开(公告)日：2023-03-02

申请号：US17745374

申请日：2022-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngchun KWON ,  Seokho KANG ,  Jin Woo KIM ,  Dongseon LEE ,  Younsuk CHOI

IPC: G05B19/418

Abstract: A method of optimizing synthetic conditions includes receiving a graph-type descriptor comprising at least one of structural information of at least one reactant and structural information of a target product to be synthesized by the reactant; determining combinations of synthetic conditions for generating the target product by applying the graph-type descriptor to a prediction neural network model; selecting at least one initial condition combination from among the combinations based on a first confidence corresponding to a yield of the combinations; updating the prediction neural network model based on a ground-truth yield obtained from a result of an experiment with the initial condition combination; determining a priority of the combinations based on the updated prediction neural network model; and determining subsequent combinations of synthetic conditions based on the determined priority.

公开(公告)号：US20210328030A1

公开(公告)日：2021-10-21

申请号：US17105868

申请日：2020-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Youn KIM ,  Sang Jung KANG ,  Jin Woo KIM ,  Seul Gi YUN

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/786

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate including a first region and a second region, a first gate structure extending in a first direction on the first region of the substrate, the first gate structure including a first gate insulation film and a first work function film disposed on the first gate insulation film, and a second gate structure extending in the first direction on the second region of the substrate, the second gate structure including a second gate insulation film and a second work function film disposed on the second gate insulation film, wherein a first thickness of the first work function film in a second direction intersecting the first direction is different from a second thickness of the second work function film in the second direction, and wherein a first height of the first work function film in a third direction perpendicular to the first and second directions is different from a second height of the second work function film in the third direction.