公开(公告)号：US09543308B2

公开(公告)日：2017-01-10

申请号：US15009948

申请日：2016-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoon Park ,  Young-Seok Kim ,  Yeong-Cheol Lee

IPC: H01L27/108 ,  H01L21/764

CPC classification number: H01L27/10805 ,  H01L21/76224 ,  H01L21/764 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10888

Abstract: A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer.

Abstract translation: 半导体器件包括衬底上的位线结构，位线结构具有掺杂杂质的多晶硅层图案，多晶硅层图案上的金属层图案，围绕并接触位线结构侧壁的第一间隔物， 所述第一间隔物具有恒定的厚度，以及所述衬底上的电容器接触结构，气隙限定在所述电容器接触结构和所述第一间隔物之间​​。

公开(公告)号：US09257437B2

公开(公告)日：2016-02-09

申请号：US14475687

申请日：2014-09-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoon Park ,  Young-Seok Kim ,  Yeong-Cheol Lee

IPC: H01L27/108 ,  H01L21/764

CPC classification number: H01L27/10805 ,  H01L21/76224 ,  H01L21/764 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10885 ,  H01L27/10888

Abstract: A semiconductor device includes a bit line structure on a substrate, the bit line structure having a polysilicon layer pattern doped with impurities, and a metal layer pattern on the polysilicon layer pattern, a first spacer surrounding and contacting a sidewall of the bit line structure, the first spacer having a constant thickness, and a capacitor contact structure on the substrate, an air gap being defined between the capacitor contact structure and the first spacer.

Abstract translation: 半导体器件包括衬底上的位线结构，位线结构具有掺杂杂质的多晶硅层图案，多晶硅层图案上的金属层图案，围绕并接触位线结构侧壁的第一间隔物， 所述第一间隔物具有恒定的厚度，以及所述衬底上的电容器接触结构，气隙限定在所述电容器接触结构和所述第一间隔物之间​​。