公开(公告)号：US20230262329A1

公开(公告)日：2023-08-17

申请号：US18138762

申请日：2023-04-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Kyungho Lee ,  Masato Fujita

IPC: H04N23/67 ,  G03B13/16 ,  H01L27/146

CPC classification number: H04N23/67 ,  G03B13/16 ,  H01L27/14612 ,  H01L27/14647 ,  H01L27/14627

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

公开(公告)号：US20230007163A1

公开(公告)日：2023-01-05

申请号：US17941302

申请日：2022-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Kyungho LEE ,  Masato FUJITA

IPC: H04N5/232 ,  G03B13/16 ,  H01L27/146

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.

公开(公告)号：US20220384512A1

公开(公告)日：2022-12-01

申请号：US17743788

申请日：2022-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonseok LEE ,  Eunsub SHIM

IPC: H01L27/146

Abstract: An image sensor includes: photodiodes arranged in a substrate; active pillars connected to the photodiodes and extending in a vertical direction perpendicular to a bottom surface of the substrate; at least two transistors stacked in the vertical direction, wherein portions of the active pillars are channel areas of the at least two transistors; a floating diffusion (FD) area disposed under a transfer transistor, which is one of the at least two transistors, wherein the FD area is configured to receive charge from the photodiode through the transfer transistor and the portions of the active pillars; and a light transmitting layer disposed on a top surface of the substrate.

公开(公告)号：US20230253438A1

公开(公告)日：2023-08-10

申请号：US18106764

申请日：2023-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Younggu JIN

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14636

Abstract: An image sensor is provided. The image sensor includes: a semiconductor substrate including a photoelectric conversion region; a buried transmission gate electrode provided in a transmission gate trench; a fin-type active region provided between a first trench and a second trench which extend into the semiconductor substrate, wherein the fin-type active region includes a first source/drain region, a second source/drain region, and a channel region provided between the first and second source/drain regions; and a first gate electrode covering a top surface and both sidewalls of the fin-type active region, and inner walls of the first trench and the second trench. The channel region, the first source/drain region and the second source/drain region each have a first conductivity type. The photoelectric conversion region and the fin-type active region overlap along a vertical direction.

公开(公告)号：US20220311965A1

公开(公告)日：2022-09-29

申请号：US17522021

申请日：2021-11-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM

IPC: H04N5/374 ,  H04N5/3745 ,  H01L27/146

Abstract: An image sensor including: a pixel array including pixels each pixel including a photoelectric conversion element, a transmission transistor to transmit photocharges generated by the photoelectric conversion element to a floating diffusion node, and a reset transistor to reset the floating diffusion node based on a pixel power voltage; and a row driver to control the pixels, wherein the row driver includes a transmission control signal generator to provide a transmission control signal to the transmission transistor, wherein the transmission control signal generator includes: a first transistor to which a first voltage is applied; a second transistor connected to the first transistor; a third transistor to which a second voltage is applied, the second voltage being higher than the first voltage; and a fourth transistor connected to the third transistor, wherein an ON resistance of the second transistor is different from an ON resistance of the first transistor.

公开(公告)号：US20210281782A1

公开(公告)日：2021-09-09

申请号：US17326587

申请日：2021-05-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunsub SHIM ,  Seyoung KIM ,  Sanghyuck MOON

IPC: H04N5/355

Abstract: An image sensor includes first photodiodes sharing a first node that is connected to a first capacitor, second photodiodes sharing a second node that is connected to a second capacitor, a common transistor configured to selectively connect a third node to a pixel voltage node, the third node connected to a third capacitor, a first reset transistor that may selectively connect the first node to the third node, and a second reset transistor that may selectively connect the second node to the third node. The first reset transistor and the second reset transistor may electrically connect the first node, the second node, and the third node to each other according to an operation of the first reset transistor and the second reset transistor. The common transistor is configured to reset the third node to the pixel voltage according to an operation of the common transistor.

公开(公告)号：US20210120168A1

公开(公告)日：2021-04-22

申请号：US16941813

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Kyungho LEE ,  Masato FUJITA

IPC: H04N5/232 ,  G03B13/16 ,  H01L27/146

Abstract: An image sensor according to an example embodiment include a plurality of image pixel groups, a plurality of auto focusing (AF) pixel groups, a first transmission control signal line connected to a first pixel of each of the plurality of image pixel groups, a second transmission control signal line connected to a second pixel of each of the plurality of image pixel groups, a third transmission control signal line connected to a first pixel of each of the plurality of AF pixel groups, and a fourth transmission control signal line connected to a second pixel of each of the plurality of AF pixel groups, wherein the fourth transmission control signal line is electrically separated from the first to the third transmission control signal line, and the each of the plurality of image pixel group and the plurality of AF pixel groups are disposed below a single microlens.