公开(公告)号：US20140001469A1

公开(公告)日：2014-01-02

申请号：US13931697

申请日：2013-06-28

Applicant: Samsung Display Co., Ltd. ,  SAMSUNG CORNING PRECISION MATERIALS CO., LTD.

Inventor： Jaewoo PARK ,  Yoon Gyu LEE ,  Do-Hyun KIM ,  Dongjo KIM ,  Juok PARK ,  Insung SOHN ,  Sangwon YOON ,  Gunhyo LEE ,  Yongjin LEE ,  Woo-Seok JEON

IPC: H01L29/786 ,  C23C14/34

CPC classification number: H01L29/78693 ,  C23C14/0036 ,  C23C14/086 ,  C23C14/3407 ,  C23C14/3414

Abstract: A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.

Abstract translation: 薄膜晶体管包括阻挡材料扩散出金属电极的金属电极和氧化锌基阻挡膜。 基于氧化锌的阻挡膜由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌系阻挡膜的1〜50重量％。 用于沉积薄膜晶体管的阻挡膜的氧化锌基溅射靶由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌基的1〜50重量％ 溅射靶。