公开(公告)号：US12237314B2

公开(公告)日：2025-02-25

申请号：US18620480

申请日：2024-03-28

Applicant: Samsung Display Co., LTD.

Inventor： Hyung Rae Cha ,  Dong Uk Kim ,  Sung Ae Jang ,  Ji Hyun Ham

IPC: H01L25/075 ,  H01L27/12 ,  H01L33/00 ,  H01L33/22 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

Abstract: A light-emitting element includes a first end portion and a second end portion disposed in a length direction of the light-emitting element, a first electrode corresponding to the first end portion, a first semiconductor layer on the first electrode, an active layer on the first semiconductor layer, a second semiconductor layer on the active layer, and a second electrode on the second semiconductor layer and corresponding to the second end portion. The second electrode includes a first layer on the first semiconductor layer, and a second layer on the first layer. The first semiconductor layer includes a p-type semiconductor layer doped with a p-type dopant. The second semiconductor layer includes an n-type semiconductor layer doped with an n-type dopant. The first electrode is in ohmic contact with the first semiconductor layer. The second electrode is in ohmic contact with the second semiconductor layer.

公开(公告)号：US12046625B2

公开(公告)日：2024-07-23

申请号：US17265799

申请日：2019-01-14

Applicant: Samsung Display Co., Ltd.

Inventor： Jung Hong Min ,  Dae Hyun Kim ,  Hyun Min Cho ,  Dong Uk Kim ,  Dong Eon Lee ,  Seung A Lee ,  Hyung Rae Cha

IPC: H01L33/12 ,  H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L27/156 ,  H01L33/0095 ,  H01L33/12 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40

Abstract: Provided are a light-emitting element, a manufacturing method thereof, and a display device comprising the light-emitting element. The method for manufacturing the light-emitting element comprises the steps of: preparing a lower substrate including a substrate and a buffer material layer formed on the substrate, forming a separating layer disposed on the lower substrate and including at least one graphene layer, forming an element deposition structure by depositing a first conductivity type semiconductor layer, an active material layer, and a second conductivity type semiconductor layer on the separating layer, forming an element rod by etching the element deposition structure and the separating layer in a vertical direction; and separating the element rod from the lower substrate to form a light emitting element.

公开(公告)号：US11004892B2

公开(公告)日：2021-05-11

申请号：US16275794

申请日：2019-02-14

Applicant: Samsung Display Co., Ltd.

Inventor： Dong Uk Kim ,  Hyun Min Cho ,  Keun Kyu Song ,  Dae Hyun Kim ,  Jung Hong Min ,  Seung A Lee ,  Hyung Rae Cha

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/60

Abstract: A display device includes a first pixel and a second pixel; a light emitting layer; a color conversion layer on the light emitting layer; and a color filter layer on the color conversion layer, the light emitting layer including one or more light emitting elements in the first pixel and the second pixel, the color conversion layer including a first color conversion layer in the first pixel and a second color conversion layer in the second pixel. The color filter layer includes a first color filter layer in the first pixel and a second color filter layer in the second pixel, the light emitting elements capable of emitting a first light having a first wavelength, each of the first color conversion layer and the second color conversion layer including first color conversion particles and second color conversion particles.

公开(公告)号：US10862000B2

公开(公告)日：2020-12-08

申请号：US16274109

申请日：2019-02-12

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jung Hong Min ,  Dae Hyun Kim ,  Seung A Lee ,  Hyun Min Cho ,  Jong Hyuk Kang ,  Dong Uk Kim ,  Hyun Deok Im ,  Hyung Rae Cha

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/32 ,  H01L21/302

Abstract: A light emitting element, a method of manufacturing a light emitting element, and a display device including a light emitting element are provided. A method of manufacturing a light emitting element includes: preparing a lower panel including a substrate and a first sub conductive semiconductor layer on the substrate; forming a first mask layer including at least one mask pattern on at least a part of the lower panel to be spaced apart from each other and an opening region in which the mask patterns are spaced apart from each other; laminating a first conductive semiconductor layer, an active material layer, and a second conductive semiconductor layer on the first mask layer to form an element laminate; etching the element laminate in a vertical direction to form an element rod; and removing the mask pattern to separate the element rod from the lower panel.