公开(公告)号：US11455952B2

公开(公告)日：2022-09-27

申请号：US17084142

申请日：2020-10-29

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Doona Kim ,  Sangsub Kim ,  Dokyeong Lee ,  Jaehwan Chu

IPC: G09G3/3233 ,  H01L51/00 ,  H01L27/32

Abstract: A display apparatus includes a first thin-film transistor including a semiconductor layer arranged on a substrate, a driving gate electrode arranged on the semiconductor layer, and a first electrode arranged between the substrate and the semiconductor layer, a second thin-film transistor transmitting a data signal received through a data line to the first thin-film transistor according to a first scan signal received through a first scan line, and a third thin-film transistor transmitting a first voltage to the first electrode according to a second scan signal received through a second scan line.

公开(公告)号：US20210288123A1

公开(公告)日：2021-09-16

申请号：US17134595

申请日：2020-12-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Keunwoo Kim ,  Taewook Kang ,  Doona Kim ,  Bummo Sung ,  Dokyeong Lee ,  Jaehwan Chu

IPC: H01L27/32 ,  H01L29/786

Abstract: A thin-film transistor substrate includes a semiconductor layer disposed on a substrate, a gate insulating layer disposed on the semiconductor layer, a first electrode that at least partly overlaps the semiconductor layer, wherein the gate insulating layer is disposed between the first electrode and the semiconductor layer, a plurality of thin-film layers disposed on the first electrode, and a second electrode that at least partly overlaps the first electrode, wherein the plurality of thin-film layers are disposed between the second electrode and the first electrode, wherein at least one of the plurality of thin-film layers includes amorphous silicon.