公开(公告)号：US20150270118A1

公开(公告)日：2015-09-24

申请号：US14513463

申请日：2014-10-14

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi KISHIMOTO ,  Yeon-Keon MOON ,  Sang-Woo SOHN ,  Takayuki FUKASAWA ,  Sang-Won SHIN

IPC: H01L21/02 ,  C23C16/50 ,  C23C16/46

CPC classification number: C23C16/50 ,  C23C16/40 ,  C23C16/46 ,  C23C16/509 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67207 ,  H01L21/67745 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor depositing apparatus includes a heating chamber which is configured to heat and plasma-treat a first substrate including an insulation layer, and includes a chamber body, a heater disposed in the chamber body which is configured to heat the first substrate, and a cathode plate spaced apart from the heater, a high frequency voltage applied to the cathode plate, and a first process chamber which is configured to provide an oxide semiconductor layer on the insulation layer of the first substrate.

Abstract translation: 一种氧化物半导体沉积装置，包括加热室，其被配置为加热和等离子体处理包括绝缘层的第一基板，并且包括室主体，设置在室主体中的加热第一基板的加热器，以及 与加热器隔开的阴极板，施加到阴极板的高频电压，以及第一处理室，其被配置为在第一基板的绝缘层上提供氧化物半导体层。

公开(公告)号：US20140353658A1

公开(公告)日：2014-12-04

申请号：US14049422

申请日：2013-10-09

Applicant: Samsung Display Co., Ltd.

Inventor： Katsushi KISHIMOTO ,  Takayuki FUKASAWA

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66 ,  C23C14/34

CPC classification number: H01L21/02631 ,  C23C14/3414 ,  H01L21/02565 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium.

Abstract translation: 薄膜晶体管包括栅电极，源电极，设置在与源电极相同的层上并面对源电极的漏电极，设置在栅电极和源电极或漏电极之间的氧化物半导体层，以及 栅极绝缘层，其设置在栅电极和源电极或漏电极之间，其中氧化物半导体层包括铊和铟，锌，锡和镓中的至少一种。 还有一种氧化物溅射靶，包括：包括铊（Tl）的氧化物; 以及铟，锌，锡和镓中的至少一种。