DISPLAY DEVICE
    11.
    发明申请

    公开(公告)号:US20220149140A1

    公开(公告)日:2022-05-12

    申请号:US17504225

    申请日:2021-10-18

    Abstract: A display device includes: a first active pattern above a substrate; a first gate electrode above the first active pattern; a second active pattern above the first gate electrode; a second gate electrode above the second active pattern; and a first gate line between the first gate electrode and the second active pattern and extending in a first direction, wherein the second gate electrode is electrically connected to the first gate line through a contact portion penetrating an insulating layer between the second gate electrode and the first gate line, wherein, in a plan view, a width of the second gate electrode surrounding the contact portion is 1.5 micrometers (μm) or greater.

    DISPLAY DEVICE
    12.
    发明申请

    公开(公告)号:US20210280664A1

    公开(公告)日:2021-09-09

    申请号:US17248884

    申请日:2021-02-11

    Abstract: A display device having a plurality of pixel structures, each of the plurality of the pixel structures including: a substrate; a first active pattern on the substrate; a first gate line on the first active pattern and extending in a first direction; a first connecting pattern on the first gate line and configured to transmit an initialization voltage; a second connecting pattern on the first connecting pattern and electrically connected to the first active pattern and the first connecting pattern; and a first electrode on the second connecting pattern and configured to be initialized in response to the initialization voltage.

    ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
    13.
    发明申请

    公开(公告)号:US20170365216A1

    公开(公告)日:2017-12-21

    申请号:US15693762

    申请日:2017-09-01

    Abstract: An organic light-emitting display apparatus including an organic light-emitting diode emitting visible light, a driving thin film transistor driving the organic light-emitting diode, and a compensation thin film transistor. The compensation thin film transistor includes a compensation gate electrode, a compensation semiconductor layer, a compensation source electrode, and a compensation drain electrode. The compensation gate electrode includes a first gate electrode, and a second gate electrode electrically connected to the first gate electrode. The compensation drain electrode is electrically connected to the driving gate electrode of the driving thin film transistor. The compensation semiconductor layer includes a first semiconductor region overlapping the first gate electrode and a second semiconductor region overlapping the second gate electrode and disposed further from the compensation drain electrode than the first semiconductor region, and an area of the first semiconductor region is different than an area of the second semiconductor region.

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