公开(公告)号：US20180047776A1

公开(公告)日：2018-02-15

申请号：US15725957

申请日：2017-10-05

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US20190341418A1

公开(公告)日：2019-11-07

申请号：US16510445

申请日：2019-07-12

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US09960202B2

公开(公告)日：2018-05-01

申请号：US15370778

申请日：2016-12-06

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N9/04 ,  H04N5/374

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.

公开(公告)号：US20170084659A1

公开(公告)日：2017-03-23

申请号：US15370778

申请日：2016-12-06

Applicant: Sony Corporation

Inventor： Rena Suzuki ,  Hiroki Tojinbara ,  Ryoto Yoshita ,  Yoichi Ueda

IPC: H01L27/146 ,  H04N5/374 ,  H04N9/04

CPC classification number: H01L27/14645 ,  H01L27/14607 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14685 ,  H04N5/374 ,  H04N9/045

Abstract: Disclosed is a solid-state imaging device including a plurality of pixels and a plurality of on-chip lenses. The plurality of pixels are arranged in a matrix pattern. Each of the pixels has a photoelectric conversion portion configured to photoelectrically convert light incident from a rear surface side of a semiconductor substrate. The plurality of on-chip lenses are arranged for every other pixel. The on-chip lenses are larger in size than the pixels. Each of color filters at the pixels where the on-chip lenses are present has a cross-sectional shape whose upper side close to the on-chip lens is the same in width as the on-chip lens and whose lower side close to the photoelectric conversion portion is shorter than the upper side.