公开(公告)号：US20240276112A1

公开(公告)日：2024-08-15

申请号：US18425255

申请日：2024-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggu JIN

IPC: H04N25/53 ,  G01S7/4863 ,  G01S17/894 ,  H04N23/56 ,  H04N25/771 ,  H04N25/78

CPC classification number: H04N25/53 ,  G01S7/4863 ,  G01S17/894 ,  H04N23/56 ,  H04N25/771 ,  H04N25/78

Abstract: An image sensor for distance measurement and a camera module including the same are provided. The image sensor includes a pixel array including a plurality of unit pixels, a control circuit configured to provide a plurality of photo gate signals to the plurality of unit pixels, respectively, and a readout circuit configured to read out pixel signals from the pixel array on a frame-by-frame basis, wherein the control circuit generates the plurality of photo gate signals such that a pulse width is changed within one frame section.

公开(公告)号：US20230411423A1

公开(公告)日：2023-12-21

申请号：US18199601

申请日：2023-05-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu JIN ,  Youngchan KIM ,  Yonghun KWON

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14645

Abstract: An image sensor includes a substrate having a plurality of unit pixels, a photoelectric device portion and a storage device portion disposed in the substrate and constituting the plurality of unit pixels, a device isolation structure disposed in the substrate and partitioning the plurality of unit pixels, and an overflow gate providing an overflow path between the photoelectric device portion and the storage device portion according to a certain voltage, wherein the device isolation structure is partially opened at a boundary between the photoelectric device portion and the storage device portion.

公开(公告)号：US20230253438A1

公开(公告)日：2023-08-10

申请号：US18106764

申请日：2023-02-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunsub SHIM ,  Younggu JIN

IPC: H01L27/146

CPC classification number: H01L27/14643 ,  H01L27/1463 ,  H01L27/14636

Abstract: An image sensor is provided. The image sensor includes: a semiconductor substrate including a photoelectric conversion region; a buried transmission gate electrode provided in a transmission gate trench; a fin-type active region provided between a first trench and a second trench which extend into the semiconductor substrate, wherein the fin-type active region includes a first source/drain region, a second source/drain region, and a channel region provided between the first and second source/drain regions; and a first gate electrode covering a top surface and both sidewalls of the fin-type active region, and inner walls of the first trench and the second trench. The channel region, the first source/drain region and the second source/drain region each have a first conductivity type. The photoelectric conversion region and the fin-type active region overlap along a vertical direction.

公开(公告)号：US20230071106A1

公开(公告)日：2023-03-09

申请号：US17741983

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younggu JIN

IPC: H01L27/146

Abstract: Provided is an image sensor including a light sensing element in a substrate, a plurality of transfer gates (TGs) spaced apart from each other in a horizontal direction substantially parallel to a surface of the substrate, each of the plurality of TGs extending through a portion of the substrate and contacting the light sensing element, and a floating diffusion (FD) region on a portion of the substrate adjacent to the plurality of TGs, wherein the FD region is between the plurality of TGs in a plan view.