Imaging device
    12.
    发明授权

    公开(公告)号:US12302652B2

    公开(公告)日:2025-05-13

    申请号:US17483655

    申请日:2021-09-23

    Abstract: An imaging device includes a semiconductor substrate and pixels, which includes a first pixel and second pixels adjacent thereto. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a first plug that electrically connects the semiconductor substrate and the first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, and a second plug that electrically connects the semiconductor substrate and the second pixel electrode. In the first pixel and the plurality of second pixels, a distance between the closest plugs of the first plugs and the second plugs is larger than or equal to one-half of a pixel pitch, when viewed in a normal direction of the semiconductor substrate.

    Imaging device
    13.
    发明授权

    公开(公告)号:US11496702B2

    公开(公告)日:2022-11-08

    申请号:US17202060

    申请日:2021-03-15

    Abstract: An imaging device including a photoelectric converter that converts incident light into an electric charge; a transfer transistor; a first node coupled to the photoelectric converter via the transfer transistor; a first signal detection transistor having a gate coupled to the first node; a second signal detection transistor having a gate coupled to the photoelectric converter; a signal line coupled to one of a source and a drain of the first signal detection transistor; a first transistor coupled to the first node; and a second transistor coupled to the photoelectric converter, wherein one of the source and the drain of the first signal detection transistor is coupled to the first transistor, one of a source and a drain of the second signal detection transistor is coupled to the second transistor, and no transistor is coupled between the photoelectric converter and the gate of the second signal detection transistor.

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