公开(公告)号：US20160181296A1

公开(公告)日：2016-06-23

申请号：US15059182

申请日：2016-03-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14627 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645

Abstract: An image sensor pixel includes a first photodiode and a second photodiode disposed in a semiconductor material. The first photodiode has a first doped region, a first lightly doped region, and a first highly doped region. The second photodiode has a second full well capacity substantially equal to a first full well capacity of the first photodiode, and includes a second doped region, a second lightly doped region, and a second highly doped region. The image sensor pixel also includes a first microlens optically coupled to direct a first amount of image light to the first photodiode, and a second microlens optically coupled to direct a second amount of image light to the second photodiode. The first amount of image light is larger than the second amount of image light.

Abstract translation: 图像传感器像素包括设置在半导体材料中的第一光电二极管和第二光电二极管。 第一光电二极管具有第一掺杂区域，第一轻掺杂区域和第一高掺杂区域。 第二光电二极管具有基本上等于第一光电二极管的第一全阱容量的第二全阱容量，并且包括第二掺杂区，第二轻掺杂区和第二高掺杂区。 图像传感器像素还包括光学耦合以将第一量的图像光引导到第一光电二极管的第一微透镜，以及光学耦合以将第二量的图像光引导到第二光电二极管的第二微透镜。 第一量的图像光大于第二量的图像光。

公开(公告)号：US20150076330A1

公开(公告)日：2015-03-19

申请号：US14029515

申请日：2013-09-17

Applicant: OmniVision Technologies, Inc.

Inventor： Jeong-Ho Lyu ,  Sohei Manabe

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14616 ,  H01L27/14641 ,  H04N5/3559 ,  H04N5/37457

Abstract: A CMOS photodiode device for use in a dual-sensitivity imaging pixel contains at least two areas of differential doping. Transistors are provided in electrical contact with these areas to govern operation of signals emanating from the photodiode on two channels, each associated with a different sensitivity to light. A plurality of such photodiodes may be incorporate into a shared arrangement forming a single pixel, in order to enhance the signals.

Abstract translation: 用于双灵敏度成像像素的CMOS光电二极管装置包含至少两个差分掺杂区域。 提供与这些区域电接触的晶体管以控制在两个通道上从光电二极管发出的信号的操作，每个通道与光的灵敏度相关。 多个这样的光电二极管可以结合到形成单个像素的共享布置中，以便增强信号。