公开(公告)号：US20210082724A1

公开(公告)日：2021-03-18

申请号：US17024851

申请日：2020-09-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Hua Chung ,  Haochen Li ,  Xinliang Lu ,  Shawming Ma ,  Haichun Yang ,  Michael X. Yang

IPC: H01L21/67 ,  H01L21/30 ,  H01L21/321 ,  H01L21/223

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

公开(公告)号：US20210066074A1

公开(公告)日：2021-03-04

申请号：US16556938

申请日：2019-08-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Hua Chung ,  Xinliang Lu ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/02 ,  H01J37/32 ,  C23C8/24 ,  C23C8/36

Abstract: Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.

公开(公告)号：US11791181B2

公开(公告)日：2023-10-17

申请号：US17024851

申请日：2020-09-18

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Hua Chung ,  Haochen Li ,  Xinliang Lu ,  Shawming Ma ,  Haichun Yang ,  Michael X. Yang

IPC: H01L21/67 ,  H01L21/223 ,  H01L21/321 ,  H01L21/30

CPC classification number: H01L21/67213 ,  H01L21/2236 ,  H01L21/3003 ,  H01L21/321

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

公开(公告)号：US10950428B1

公开(公告)日：2021-03-16

申请号：US16556938

申请日：2019-08-30

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Hua Chung ,  Xinliang Lu ,  Shawming Ma ,  Michael X. Yang

IPC: H01L21/02 ,  H01J37/32 ,  C23C8/24 ,  C23C8/36

Abstract: Processes for providing nitridation on a workpiece, such as a semiconductor, are provided. In one example implementation, a method can include supporting a workpiece on a workpiece support. The method can include exposing the workpiece to species generated from a capacitively coupled plasma to provide nitridation on the workpiece. The method can also include exposing the workpiece to species generated form an inductively coupled plasma to provide nitridation on the workpiece.

公开(公告)号：US20200373129A1

公开(公告)日：2020-11-26

申请号：US16878661

申请日：2020-05-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/02

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

公开(公告)号：US20200185216A1

公开(公告)日：2020-06-11

申请号：US16522193

申请日：2019-07-25

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD.

Inventor： Michael X. Yang ,  Hua Chung ,  Xinliang Lu ,  Haochen Li ,  Ting Xie ,  Qi Zhang

IPC: H01L21/02 ,  H01L21/285 ,  H01J37/32 ,  H01L21/67 ,  H01L21/3213

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.

公开(公告)号：US20240404797A1

公开(公告)日：2024-12-05

申请号：US18677456

申请日：2024-05-29

Applicant: Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

Inventor： Ting Xie ,  Jiaying Yang ,  Haichun Yang

IPC: H01J37/32

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

公开(公告)号：US20240165659A1

公开(公告)日：2024-05-23

申请号：US18514719

申请日：2023-11-20

Applicant: Beijing E-Town Semiconductor Technology Co., Ltd. ,  Mattson Technology, Inc.

Inventor： Ting Xie ,  Binhui Hu ,  Haichun Yang

IPC: B05D1/00 ,  B05D7/24

CPC classification number: B05D1/62 ,  B05D7/24

Abstract: Processes treating a workpiece are provided. In one example implementation, a method can include performing an organic radical treatment process on a workpiece. The workpiece includes a photoresist material and a semiconductor material. The organic radical treatment process can include generating one or more species in a first chamber. The treatment process can include flowing one or more hydrocarbon molecules at a flow rate of about 100 sccm to about 15000 sccm into the one or more species to create a mixture. The mixture can include one or more organic radicals. The treatment process can include exposing the workpiece to the mixture in a second chamber. The mixture etches the photoresist material at an etch rate that is greater than an etch rate of the semiconductor material. Devices and systems for processing workpieces are also provided.

公开(公告)号：US11495456B2

公开(公告)日：2022-11-08

申请号：US16589270

申请日：2019-10-01

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology, Co., LTD

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: C23C16/02 ,  H01L21/02 ,  C23C16/50 ,  C23C16/458

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

公开(公告)号：US11495437B2

公开(公告)日：2022-11-08

申请号：US16878661

申请日：2020-05-20

Applicant: Mattson Technology, Inc. ,  Beijing E-Town Semiconductor Technology Co., Ltd.

Inventor： Ting Xie ,  Xinliang Lu ,  Hua Chung ,  Michael X. Yang

IPC: H01J37/32 ,  H01L21/02

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.