公开(公告)号：US20080041151A1

公开(公告)日：2008-02-21

申请号：US11800009

申请日：2007-04-30

Applicant: Matthias Fuertsch ,  Stefan Finkbeiner ,  Christoph Schelling ,  Stefan Weiss ,  Thomas Wagner ,  Christian Maeurer ,  Ines Breibach

Inventor： Matthias Fuertsch ,  Stefan Finkbeiner ,  Christoph Schelling ,  Stefan Weiss ,  Thomas Wagner ,  Christian Maeurer ,  Ines Breibach

IPC: G01F1/68 ,  B44C1/22

CPC classification number: B01L3/0268 ,  B01L3/0248 ,  B01L2300/0819 ,  B01L2300/1827 ,  B01L2400/0442 ,  Y10T137/87153

Abstract: A microfluidic device for metering a fluid or for the metered dispensing of a fluid is provided, the device having a substrate, a pipette element having a dispensing side, which pipette element has a sealed side, and the device also having a heating device in the region of the sealed side. Alternatively, the microfluidic device is provided with the pipette element having a side that is connected to a reservoir, and a heating device in the region of the side connected to the reservoir.

Abstract translation: 提供了一种用于计量流体或用于流体计量分配的微流体装置，所述装置具有基底，具有分配侧的移液管元件，所述移液管元件具有密封侧，并且所述装置还具有加热装置 密封面的区域。 或者，微流体装置设置有具有连接到储存器的侧面的移液管元件，以及连接到储存器的侧面区域中的加热装置。

公开(公告)号：US07060197B2

公开(公告)日：2006-06-13

申请号：US10362654

申请日：2002-06-08

Applicant: Matthias Fuertsch ,  Frank Fischer ,  Lars Metzger ,  Frieder Sundermeier

Inventor： Matthias Fuertsch ,  Frank Fischer ,  Lars Metzger ,  Frieder Sundermeier

IPC: C23F1/00

CPC classification number: G01F1/6845

Abstract: In a mass flow sensor having a layered structure on the upper side of a silicon substrate (1), and having at least one heating element (8) patterned out of a conductive layer in the layered structure, thermal insulation between the heating element (8) and the silicon substrate (1) is achieved by way of a silicon dioxide block (5) which is produced beneath the heating element (8) either in the layered structure on the silicon substrate (1) or in the upper side of the silicon substrate (1). As a result, the sensor can be manufactured by surface micromechanics, i.e. without wafer back-side processes.

Abstract translation: 在具有层叠结构的质量流量传感器中，在硅衬底（1）的上侧具有至少一层由层叠结构中的导电层构图的加热元件（8），加热元件（8） ）和硅衬底（1）通过二氧化硅块（5）实现，该二氧化硅块（5）在硅衬底（1）上的层状结构中或在硅的上侧在加热元件（8）下方产生 基板（1）。 结果，传感器可以通过表面微机械制造，即没有晶片背面工艺。

公开(公告)号：US20050022593A1

公开(公告)日：2005-02-03

申请号：US10900695

申请日：2004-07-27

Applicant: Jochen Franz ,  Matthias Fuertsch ,  Stefan Finkbeiner ,  Stefan Weiss ,  Axel Kaschner

Inventor： Jochen Franz ,  Matthias Fuertsch ,  Stefan Finkbeiner ,  Stefan Weiss ,  Axel Kaschner

IPC: G01F1/684 ,  G01F1/68

CPC classification number: G01F1/6845

Abstract: In a micromechanical sensor and/or a method for manufacturing a micromechanical sensor for detecting a state variable of a substance, the sensor includes at least one heating element, one temperature measuring element and optionally an inlet opening into and/or an outlet opening out of the cavity for this purpose. The sensor includes a cavity configured to at least partially receive the substance through one of the inlet openings and discharge it again at least partially through one of the outlets or outlet openings. The at least one state variable of the substance is detected here as a function of at least one variable representing the operation of the at least one heating element and/or the operation of the at least one temperature element.

Abstract translation: 在微机械传感器和/或用于制造用于检测物质的状态变量的微机械传感器的方法中，传感器包括至少一个加热元件，一个温度测量元件和可选地入口和/或出口开口 为此目的的腔。 该传感器包括被配置成至少部分地通过其中一个入口开口接收物质的空腔，并再次至少部分地通过其中一个出口或出口排出。 物质的至少一个状态变量在此被视为表示至少一个加热元件的操作和/或至少一个温度元件的操作的至少一个变量的函数。

公开(公告)号：US06251699B1

公开(公告)日：2001-06-26

申请号：US09617175

申请日：2000-07-17

Applicant: Matthias Fuertsch ,  Michael Offenberg

Inventor： Matthias Fuertsch ,  Michael Offenberg

IPC: H01L2100

CPC classification number: B81C1/00666 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0164 ,  B81C2201/0169

Abstract: A method for fabricating micromechanical components, which provides for depositing one or a plurality of sacrificial layers on a silicon substrate and, thereon, a silicon layer. In subsequent method steps, a structure is patterned out of the silicon layer, and the sacrificial layer is removed, at least under one section of the structure. The silicon layer is doped by an implantation process.

Abstract translation: 一种用于制造微机械部件的方法，其提供在硅衬底上以及其上的硅层上沉积一个或多个牺牲层。 在随后的方法步骤中，从硅层图案化结构，并且至少在该结构的一个部分处去除牺牲层。 通过注入工艺掺杂硅层。