Mid-infrared spectroscopy for measurement of high aspect ratio structures

    公开(公告)号:US11137350B2

    公开(公告)日:2021-10-05

    申请号:US16741734

    申请日:2020-01-13

    Abstract: Methods and systems for performing high throughput spectroscopic measurements of semiconductor structures at mid-infrared wavelengths are presented herein. A Fourier Transform Infrared (FTIR) spectrometer includes one or more measurement channels spanning a wavelength range between 2.5 micrometers and 12 micrometers. The FTIR spectrometer measures a target at multiple different angles of incidence, azimuth angles, different wavelength ranges, different polarization states, or any combination thereof. In some embodiments, illumination light is provided by a laser sustained plasma (LSP) light source to achieve high brightness and small illumination spot size. In some embodiments, FTIR measurements are performed off-axis from the direction normal to the surface of the wafer. In some embodiments, a Stirling cooler extracts heat from the detector of an FTIR spectrometer. In another aspect, measurements performed by one or more spectrometer measurement channels are combined with measurements performed by a mid-infrared FTIR spectrometer channel to characterize high aspect ratio structures.

    OVERLAY METROLOGY ON BONDED WAFERS
    12.
    发明申请

    公开(公告)号:US20210242060A1

    公开(公告)日:2021-08-05

    申请号:US17028878

    申请日:2020-09-22

    Abstract: A metrology system for characterizing a sample formed from a first wafer and a second wafer bonded at an interface with a metrology target near the interface may include a metrology tool and a controller. The metrology tool may include one or more illumination sources and an illumination sub-system to direct illumination from the one or more illumination sources to the metrology target, a detector, and a collection sub-system to collect light from the sample. The light collected from the sample may include light from the metrology target and light from a top surface of the first wafer, and the collection sub-system is may direct the light from the metrology target to the detector. The controller may execute program instructions causing the one or more processors to generate estimates of one or more parameters associated with the sample based on data received from the detector.

    MONOLITHIC OPTICAL RETARDER
    15.
    发明申请

    公开(公告)号:US20230131913A1

    公开(公告)日:2023-04-27

    申请号:US17541037

    申请日:2021-12-02

    Abstract: A monolithic optical retarder formed from a monolithic prism may include an input face for receiving a light beam, an output face aligned with an optical axis of the light beam prior to entering the input face, and three or more reflection faces. The three or more reflection faces may be oriented to provide an optical path for the light beam from the input face to the output face via reflection by the three or more reflection faces, where the monolithic optical retarder imparts a selected optical retardation on the light beam based on total internal reflection on at least one of the reflection faces. Further, the input face, the output face, and the three or more reflection faces may be oriented such that an optical axis of the light beam exiting the output face is equal to the optical axis of the light beam entering the input face.

    Methods And Systems For Spectral Measurements Based On Perturbed Spectra

    公开(公告)号:US20250164411A1

    公开(公告)日:2025-05-22

    申请号:US18911630

    申请日:2024-10-10

    Abstract: Methods and systems for measuring structural parameters characterizing a measurement target based on changes in measurement signal values due to one or more perturbations of an effective illumination angle of incidence on the measurement target are presented herein. In some examples, a measurement model estimates values of the structural parameters based on the changes in measurement signal values. In some examples, at least one derivative of detected measurement signals with respect to effective illumination angle is determined, and values of the structural parameters are estimated based on the at least one derivative. In some examples, values of one or more tunable measurement model parameters are estimated based on at least one derivative. In some examples, the fitting performance of a measurement model is quantified based on measurements performed at both unperturbed and perturbed orientations of a structure under measurement with respect to the illumination beam.

    Methods And Systems For Scatterometry Based Metrology Of Structures Fabricated On Transparent Substrates

    公开(公告)号:US20240201073A1

    公开(公告)日:2024-06-20

    申请号:US18231688

    申请日:2023-08-08

    CPC classification number: G01N21/211 G01N21/956 G01N21/958 G01N2021/213

    Abstract: Methods and systems for performing spectroscopic ellipsometry (SE) measurements of surface structures of optical elements fabricated on transparent substrates are presented herein. The SE measurement system is configured to detect light from the measured structures without contamination from light reflected from the backside surface of the transparent substrate. Surface structures of optical elements include film structures and grating structures fabricated on thin transparent substrates. The SE based measurement system is configured with a relatively large illumination Numerical Aperture (NA) and relatively high demagnification from the illumination source to the measurement spot on the optically transparent substrate. This configuration results in a relatively small measurement spot size and small depth of focus that minimizes the amount of light reflected from the backside of the optically transparent substrate. In addition, a relatively small collection aperture size further minimizes backside reflected light from reaching the detector.

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