Abstract:
Provided are a high I/O semiconductor chip package in which a processor and a memory device are connected to each other via through electrodes and a method of manufacturing the high I/O semiconductor chip package. The high I/O semiconductor chip package includes: a substrate comprising a plurality of first circuit patterns on a first surface and a plurality of second circuit patterns on a second surface; a first semiconductor chip comprising a plurality of memory devices arranged on the substrate, each memory device being arranged in a matrix in chip regions partitioned by a scribe region; a second semiconductor chip stacked on the first semiconductor chip; and a plurality of through electrodes arranged along peripheral portions of the memory devices and connecting the first and second semiconductor chips to the second circuit patterns of the substrate.
Abstract:
A package board is provided. The package board includes a board body having a front surface and a back surface. A first power pad, a first ground pad, a first signal pad, a first internal terminal pad and a second internal terminal pad are disposed on the front surface of the board body, and a second power pad, a second ground pad and a second signal pad are disposed on the back surface of the board body. The second power pad, the second ground pad and the second signal pad are electrically connected to the first power pad, the first ground pad and the first signal pad, respectively. An internal terminal interconnection is provided in a bulk region of the board body or on a surface of the board body. The internal terminal interconnection electrically connects the first internal terminal pad to the second internal terminal pad. A semiconductor package employing the package board is also provided.