公开(公告)号：US09881991B2

公开(公告)日：2018-01-30

申请号：US14918190

申请日：2015-10-20

Applicant: Infineon Technologies AG

Inventor： Wolfgang Lehnert ,  Michael Stadtmueller ,  Stefan Pompl ,  Markus Meyer

IPC: H01L27/108 ,  H01L49/02 ,  H01L29/66 ,  H01L29/94

CPC classification number: H01L28/60 ,  H01L27/10829 ,  H01L27/10861 ,  H01L29/66181 ,  H01L29/945

Abstract: A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.

公开(公告)号：US20160329401A1

公开(公告)日：2016-11-10

申请号：US15146459

申请日：2016-05-04

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Moriz Jelinek ,  Hans-Joachim Schulze ,  Werner Schustereder ,  Michael Stadtmueller

IPC: H01L29/06 ,  H01L21/8234 ,  H01L29/739 ,  H01L21/324

CPC classification number: H01L29/0692 ,  H01L21/263 ,  H01L21/26506 ,  H01L21/3221 ,  H01L21/324 ,  H01L21/8234 ,  H01L22/12 ,  H01L22/14 ,  H01L22/20 ,  H01L29/167 ,  H01L29/36 ,  H01L29/7393 ,  H01L29/8611

Abstract: A method of manufacturing a semiconductor device includes determining information that indicates an extrinsic dopant concentration and an intrinsic oxygen concentration in a semiconductor wafer. On the basis of information about the extrinsic dopant concentration and the intrinsic oxygen concentration as well as information about a generation rate or a dissociation rate of oxygen-related thermal donors in the semiconductor wafer, a process temperature gradient is determined for generating or dissociating oxygen-related thermal donors to compensate for a difference between a target dopant concentration and the extrinsic dopant concentration.

Abstract translation: 制造半导体器件的方法包括确定指示半导体晶片中的外在掺杂剂浓度和固有氧浓度的信息。 基于关于外在掺杂剂浓度和本征氧浓度的信息以及关于半导体晶片中氧相关热供体的产生速率或解离速率的信息，确定用于产生或解离氧 - 以补偿目标掺杂剂浓度与外在掺杂剂浓度之间的差异。

公开(公告)号：US20160043164A1

公开(公告)日：2016-02-11

申请号：US14918190

申请日：2015-10-20

Applicant: Infineon Technologies AG

Inventor： Wolfgang Lehnert ,  Michael Stadtmueller ,  Stefan Pompl ,  Markus Meyer

IPC: H01L49/02

CPC classification number: H01L28/60 ,  H01L27/10829 ,  H01L27/10861 ,  H01L29/66181 ,  H01L29/945

Abstract: A method for manufacturing a semiconductor device and a semiconductor device are disclosed. The method comprises forming a trench in a substrate, partially filling the trench with a first semiconductive material, forming an interface along a surface of the first semiconductive material, and filling the trench with a second semiconductive material. The semiconductor device includes a first electrode arranged along sidewalls of a trench and a dielectric arranged over the first electrode. The semiconductor device further includes a second electrode at least partially filling the trench, wherein the second electrode comprises an interface within the second electrode.

Abstract translation: 公开了半导体器件和半导体器件的制造方法。 该方法包括在衬底中形成沟槽，用第一半导体材料部分地填充沟槽，沿着第一半导体材料的表面形成界面，并用第二半导体材料填充沟槽。 半导体器件包括沿着沟槽的侧壁布置的第一电极和布置在第一电极上的电介质。 所述半导体器件还包括至少部分地填充所述沟槽的第二电极，其中所述第二电极包括所述第二电极内的界面。