公开(公告)号：US20070115727A1

公开(公告)日：2007-05-24

申请号：US11465323

申请日：2006-08-17

Applicant: Yong-Taek JEONG ,  Jin-Yub LEE

Inventor： Yong-Taek JEONG ,  Jin-Yub LEE

IPC: G11C11/34

CPC classification number: G11C5/145 ,  G11C16/30

Abstract: A flash memory device may include a pump, a regulator to control the pump so that an output voltage of the pump is substantially maintained at a target voltage, and a control circuit to control the regulator so that the pump selectively generates a program voltage or an erase voltage. In some embodiments, the output voltage of the pump may be stepped in response to program loop iterations during a program operation, or set to a target voltage during an erase operation.

Abstract translation: 闪存器件可以包括泵，用于控制泵的调节器，使得泵的输出电压基本上保持在目标电压，以及控制电路以控制调节器，使得泵选择性地产生编程电压或 擦除电压。 在一些实施例中，泵的输出电压可以在编程操作期间响应于程序循环迭代而阶梯式，或者在擦除操作期间被设置为目标电压。