公开(公告)号：US08927059B2

公开(公告)日：2015-01-06

申请号：US13669571

申请日：2012-11-06

Applicant: Applied Materials, Inc.

Inventor： Xinliang Lu ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang ,  Seshadri Ganguli ,  Wei Tang ,  Srinivas Gandikota ,  Atif Noori

IPC: C23C16/06 ,  C23C16/08 ,  C23C16/10 ,  C23C16/22 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC classification number: C23C16/455 ,  C23C16/06 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/76841

Abstract: Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.

Abstract translation: 沉积纯金属和铝合金金属膜的方法。 某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基， 并且第二前体包含金属卤化物。 其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。