公开(公告)号：US11626321B2

公开(公告)日：2023-04-11

申请号：US16882177

申请日：2020-05-22

Applicant: Applied Materials, Inc.

Inventor： Ludovic Godet ,  Wayne McMillan ,  Rutger Meyer Timmerman Thijssen ,  Naamah Argaman ,  Tapashree Roy ,  Sage Toko Garrett Doshay

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/311 ,  H01L25/04 ,  H01L25/16

Abstract: Systems and methods herein are related to the formation of optical devices including stacked optical element layers using silicon wafers, glass, or devices as substrates. The optical elements discussed herein can be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge-coupled devices (CCD), or complementary metal-oxide semiconductor (CMOS) image sensors, light-emitting diodes (LED), a micro-LED (uLED) display, organic light-emitting diode (OLED) or vertical-cavity surface-emitting laser (VCSELs). The optical elements can have interlayers formed in between optical element layers, where the interlayers can range in thickness from 1 nm to 3 mm.

公开(公告)号：US11480712B2

公开(公告)日：2022-10-25

申请号：US17212500

申请日：2021-03-25

Applicant: Applied Materials, Inc.

Inventor： Tapashree Roy ,  Rutger Meyer Timmerman Thijssen ,  Robert Jan Visser

IPC: G02F1/1335 ,  G02B1/00

Abstract: Embodiments described herein relate to nanostructured trans-reflective filters having sub-wavelength dimensions. In one embodiment, the trans-reflective filter includes a film stack that transmits a filtered light within a range of wavelengths and reflects light not within the first range of wavelengths. The film stack includes a first metal film disposed on a substrate having a first thickness, a first dielectric film disposed on the first metal film having a second thickness, a second metal film disposed on the first dielectric film having a third thickness, and a second dielectric film disposed on the second metal film having a fourth thickness.

公开(公告)号：US11473191B2

公开(公告)日：2022-10-18

申请号：US16395005

申请日：2019-04-25

Applicant: Applied Materials, Inc.

Inventor： Tapashree Roy ,  Rutger Meyer Timmerman Thijssen ,  Ludovic Godet ,  Jinxin Fu

IPC: C23C16/02 ,  C23C16/40 ,  C23C16/04

Abstract: A method for creating a flat optical structure is disclosed, having steps of providing a substrate, etching at least one nanotrench in the substrate, placing a dielectric material in the at least one nanotrench in the substrate and encapsulating a top of the substrate with a film.

公开(公告)号：US10690808B2

公开(公告)日：2020-06-23

申请号：US16105780

申请日：2018-08-20

Applicant: Applied Materials, Inc.

Inventor： Rutger Meyer Timmerman Thijssen ,  Robert Jan Visser ,  Tapashree Roy

IPC: G02B1/00

Abstract: Aspects disclosed herein relate to color filters for display devices, and more specifically to color filters for transmitting or reflecting and recycling colors of light in liquid crystal display devices. In one aspect, a metasurface is formed between two polarizers in an LCD device. In another aspect, a metasurface is formed on a white light guide of an LCD device. The metasurface is formed to transmit desired color(s) of light and to reflect undesired color(s) of light back into the light guide to be recycled and passed through the LCD device elsewhere. Using the color filter to recycle reflected colors of light increases the efficiency of the display device, such as the LCD device.

公开(公告)号：US20190128507A1

公开(公告)日：2019-05-02

申请号：US15921940

申请日：2018-03-15

Applicant: Applied Materials, Inc.

Inventor： Tapashree Roy ,  Rutger Meyer Timmerman Thijssen ,  Robert Jan Visser

IPC: F21V13/08 ,  F21V9/08 ,  F21V9/14 ,  G02F1/1335

Abstract: Embodiments described herein relate to nanostructured trans-reflective filters having sub-wavelength dimensions. In one embodiment, the trans-reflective filter includes a film stack that transmits a filtered light within a range of wavelengths and reflects light not within the first range of wavelengths. The film stack includes a first metal film disposed on a substrate having a first thickness, a first dielectric film disposed on the first metal film having a second thickness, a second metal film disposed on the first dielectric film having a third thickness, and a second dielectric film disposed on the second metal film having a fourth thickness.