公开(公告)号：US10290469B2

公开(公告)日：2019-05-14

申请号：US14293516

申请日：2014-06-02

Applicant: Applied Materials, Inc.

Inventor： Valentin N. Todorow ,  Gary Leray ,  Michael D. Willwerth ,  Li-Sheng Chiang

IPC: H05H1/46 ,  H01J37/32

Abstract: Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.

公开(公告)号：US09839109B1

公开(公告)日：2017-12-05

申请号：US15212485

申请日：2016-07-18

Applicant: APPLIED MATERIALS, INC.

Inventor： Gary Leray

IPC: H05H1/46

CPC classification number: H05H1/46 ,  H05H2001/4645 ,  H05H2001/4667 ,  H05H2001/4682

Abstract: Methods and apparatus for plasma processing are provided herein. The method for controlling current ratio in a substrate processing chamber may include (a) providing a first RF signal to a first RF coil and a second RF coil at a first current ratio set point and a first current operating mode, (b) determining a first dynamic control limit for the first current ratio set point based on a value of the first current ratio set point and the first current operating mode, (c) measuring an amount of current supplied to each of the first and second coils, (d) determining the actual current ratio based on the measured amounts of current supplied to each of the first and second coils, (e) determining whether the actual current ratio determined is within the dynamic control limits, and (f) repeating steps (b)-(e) until the actual current ratio determined is within the dynamic control limits.

公开(公告)号：US09190247B2

公开(公告)日：2015-11-17

申请号：US14164509

申请日：2014-01-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Gary Leray

IPC: G01R31/40 ,  H01J37/32 ,  G01R19/00

CPC classification number: H01J37/32082 ,  G01R19/0061 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/3299

Abstract: In a plasma reactor having pulsed RF plasma power sources, measurements by RF sensors of nulls attributable to pulse duty cycles are replaced by non-zero measurements synthesized from prior non-zero measurements, to prevent feedback control system instabilities.

Abstract translation: 在具有脉冲RF等离子体电源的等离子体反应器中，归因于脉冲占空比的无效的RF传感器的测量被从先前的非零测量合成的非零测量值代替，以防止反馈控制系统的不稳定性。

公开(公告)号：US20140232374A1

公开(公告)日：2014-08-21

申请号：US14164509

申请日：2014-01-27

Applicant: APPLIED MATERIALS, INC.

Inventor： Gary Leray

IPC: G01R31/40

CPC classification number: H01J37/32082 ,  G01R19/0061 ,  H01J37/32146 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/3299

Abstract: In a plasma reactor having pulsed RF plasma power sources, measurements by RF sensors of nulls attributable to pulse duty cycles are replaced by non-zero measurements synthesized from prior non-zero measurements, to prevent feedback control system instabilities.

Abstract translation: 在具有脉冲RF等离子体电源的等离子体反应器中，归因于脉冲占空比的无效的RF传感器的测量被从先前的非零测量合成的非零测量值代替，以防止反馈控制系统的不稳定性。