公开(公告)号：US20220037204A1

公开(公告)日：2022-02-03

申请号：US16983402

申请日：2020-08-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenjing XU ,  Gang SHEN ,  Feng CHEN ,  Tae Hong HA

IPC: H01L21/768 ,  H01L23/532

Abstract: Methods and apparatus that forms a stabilization layer on copper-based material to inhibit formation of copper voids in the copper-based material. In some embodiments, a method of forming the stabilization layer on the copper-based material includes depositing a first stabilization layer on the copper-based material where the first stabilization layer forms a continuous film on the copper-based material and is formed of a first material that does not alloy with copper, depositing a second stabilization layer on the first stabilization layer where the second stabilization layer is formed from a second material that alloys with copper and where the first stabilization layer is configured to inhibit formation of voids in the copper-based material during subsequent high thermal budget processing.