公开(公告)号：US20240266180A1

公开(公告)日：2024-08-08

申请号：US18429554

申请日：2024-02-01

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  Feng Qiao ,  Hailong Zhou ,  Junkai He ,  Qian Fu ,  Mark J. Saly ,  Jeffrey Anthis ,  Jayoung Choi

IPC: H01L21/3065 ,  H10B12/00

CPC classification number: H01L21/3065 ,  H10B12/01

Abstract: A method includes performing a dry etch process to remove a portion of a first layer disposed on a second layer of a stack of alternating layers. The first layer includes a first material and the second layer includes a second material different from the first material, and the dry etch process forms a passivation layer including a byproduct on surfaces of the second material. A amount of first material of the portion of the first layer remains after performing the dry etch process, The method further includes introducing a halide gas to enhance the passivation layer on the surfaces of the second material.

公开(公告)号：US11933942B2

公开(公告)日：2024-03-19

申请号：US16820338

申请日：2020-03-16

Applicant: APPLIED MATERIALS, INC.

Inventor： Alexander Berger ,  Cheng-Hsuan Chou ,  David Knapp

IPC: C23C16/04 ,  B05D1/00 ,  B05D7/22 ,  G02B1/14 ,  G02B3/00

CPC classification number: G02B1/14 ,  B05D1/60 ,  B05D7/22 ,  C23C16/045 ,  G02B3/00

Abstract: Described herein is a method of depositing a conformal, optically transparent coating onto a surface of one or more internal components that are enclosed within an assembled device using a non-line-of-sight deposition process without altering a structure of the assembled device or impacting functionality of the assembled device. Also described is an assembled device including one or more internal components enclosed within the assembled device and a coating deposited onto a surface of the internal components enclosed within the assembled device, where the coating is a conformal, optically transparent coating that is resistant to corrosion by at least one of fluorine-, chlorine-, sulfur-, hydrogen-, bromine-, or nitrogen-based acids and that does not negatively impact functionality of the internal components.

公开(公告)号：US10121671B2

公开(公告)日：2018-11-06

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/44 ,  H01L21/285 ,  C23C16/08 ,  C23C16/455 ,  C23C16/06 ,  H01L29/786

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

公开(公告)号：US09196474B2

公开(公告)日：2015-11-24

申请号：US14193088

申请日：2014-02-28

Applicant: Applied Materials, Inc.

Inventor： David Knapp ,  David Thompson

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/34 ,  C23C16/448 ,  C23C16/455

CPC classification number: H01L21/02175 ,  C23C16/34 ,  C23C16/4481 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/02183 ,  H01L21/02194

Abstract: Described are methods and apparatuses for the stabilization of precursors, which can be used for the deposition of manganese-containing films. Certain methods and apparatus relate to lined ampoules and/or 2-electron donor ligands.

Abstract translation: 描述了用于稳定前体的方法和装置，其可用于沉积含锰膜。 某些方法和装置涉及内衬安瓿和/或2-电子给体配体。

公开(公告)号：US09005704B2

公开(公告)日：2015-04-14

申请号：US14198776

申请日：2014-03-06

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  Jeffrey W. Anthis ,  David Knapp ,  Benjamin Schmiege

IPC: C23C16/14 ,  C23C16/34 ,  H05H1/24 ,  C23C16/42 ,  C23C16/18 ,  C23C16/455

CPC classification number: C23C16/42 ,  C23C16/18 ,  C23C16/34 ,  C23C16/45536 ,  C23C16/45553 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/76843

Abstract: Cobalt-containing films, as well as methods for providing the cobalt-containing films. Certain methods pertain to exposing a substrate surface to a precursor and a co-reactant to provide a cobalt-containing film, the first precursor having a structure represented by: wherein each R is independently C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics, L is a coordinating ligand comprising a Lewis base.

Abstract translation: 含钴膜，以及提供含钴膜的方法。 某些方法涉及将底物表面暴露于前体和共反应物以提供含钴膜，第一前体具有由以下表示的结构：其中每个R独立地为C 1 -C 6取代或未取代的烷烃，支链或 支链烷烃，取代或未取代的烯烃，支链或非支链烯烃，取代或未取代的炔烃，支链或非支链炔烃或取代或未取代的芳烃，L是包含路易斯碱的配位配体。

公开(公告)号：US20240128091A1

公开(公告)日：2024-04-18

申请号：US18221063

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Zhonghua Yao ,  Qian Fu ,  Mark J. Saly ,  Yang Yang ,  Jeffrey W. Anthis ,  David Knapp ,  Rajesh Sathiyanarayanan

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/67069

Abstract: A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

公开(公告)号：US20230287568A1

公开(公告)日：2023-09-14

申请号：US17692351

申请日：2022-03-11

Applicant: Applied Materials, Inc.

Inventor： Laksheswar Kalita ,  Joseph Behnke ,  David Knapp

IPC: C23C16/455 ,  C23C18/32 ,  C23C14/16 ,  C23C18/16 ,  C23C14/58

CPC classification number: C23C16/45565 ,  C23C18/32 ,  C23C14/165 ,  C23C18/1689 ,  C23C14/5853

Abstract: Described herein is a chamber component including a metal layer comprising nickel and a barrier layer of nickel oxide over the metal layer. The barrier layer of nickel oxide may be formed by ozone treating the chamber component with air, nitrogen or argon O2, O3 at a temperature from about 25° C. to about 350° C.

公开(公告)号：US20180204721A1

公开(公告)日：2018-07-19

申请号：US15919902

申请日：2018-03-13

Applicant: Applied Materials, Inc.

Inventor： Feng Q. Liu ,  Ben-Li Sheu ,  David Knapp ,  David Thompson

IPC: H01L21/02 ,  C23C16/18 ,  C23C16/34

CPC classification number: H01L21/02271 ,  C23C16/18 ,  C23C16/34 ,  H01L21/02142 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76873 ,  H01L23/53238

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

公开(公告)号：US09982345B2

公开(公告)日：2018-05-29

申请号：US15210352

申请日：2016-07-14

Applicant: Applied Materials, Inc.

Inventor： David Thompson ,  David Knapp ,  Jeffrey W. Anthis

IPC: C23C16/18 ,  C23C16/455 ,  C07F5/06

CPC classification number: C23C16/45536 ,  C07F5/062 ,  C23C16/18 ,  C23C16/45553

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no β-H.

公开(公告)号：US20170062224A1

公开(公告)日：2017-03-02

申请号：US15234448

申请日：2016-08-11

Applicant: Applied Materials, Inc.

Inventor： Xinyu Fu ,  David Knapp ,  David Thompson ,  Jeffrey W. Anthis ,  Mei Chang

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/08

CPC classification number: H01L21/28562 ,  C23C16/06 ,  C23C16/08 ,  C23C16/45527 ,  C23C16/45553 ,  H01L21/28556 ,  H01L29/7869

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Abstract translation: 处理方法包括将基底暴露于任选的成核促进剂，随后连续暴露包含金属卤化物化合物和第二反应气体的第一反应气体，以在基底上形成金属膜。