公开(公告)号：US20200328155A1

公开(公告)日：2020-10-15

申请号：US16382774

申请日：2019-04-12

Applicant: ADVANCED MICRO DEVICES, INC.

Inventor： Richard Schultz

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: Various semiconductor chip metallization layers and methods of manufacturing the same are disclosed. In aspect, a semiconductor chip is provided that includes a substrate, plural metallization layers on the substrate, a first conductor line in one of the metallization layers and a second conductor line in the one of the metallization layers in spaced apart relation to the first conductor line, each of the first conductor line and the second conductor line has a first line portion and a second line portion stacked on the first line portion, and a dielectric layer that has a portion positioned between the first conductor line and a second line, the portion has an air gap.