公开(公告)号：US20170160648A1

公开(公告)日：2017-06-08

申请号：US15325716

申请日：2015-07-15

Applicant: ASML Netherlands B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Paul Christiaan HINNEN ,  Reiner Maria JUNGBLUT

IPC: G03F7/20

CPC classification number: G03F7/70516 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641

Abstract: A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.

公开(公告)号：US20160370710A1

公开(公告)日：2016-12-22

申请号：US15186031

申请日：2016-06-17

Applicant: ASML Netherlands B.V.

Inventor： Peter Hanzen WARDENIER ,  Frank STAALS ,  Jean-Pierre Agnes Henricus Mar VAESSEN ,  Hans VAN DER LAAN

IPC: G03F7/20 ,  G01B11/03

CPC classification number: G03F7/70591 ,  G01B11/03 ,  G03F7/70616 ,  G03F7/70625 ,  G03F7/70633

Abstract: Disclosed is a method of determining a correction for measured values of radiation diffracted from a target comprising a plurality of periodic structures, subsequent to measurement of the target using measurement radiation defining a measurement field. The correction acts to correct for measurement field location dependence in the measured values. The method comprises performing a first and second measurements of the periodic structures; and determining a correction from said first measurement and said second measurement. The first measurement is performed with said target being in a normal measurement location with respect to the measurement field. The second measurement is performed with the periodic structure in a shifted location with respect to the measurement field, said shifted location comprising the location of another of said periodic structures when said target is in said normal measurement location with respect to the measurement field.

Abstract translation: 公开了一种在使用定义测量场的测量辐射测量目标之后，确定从包括多个周期性结构的目标衍射的辐射的测量值的校正的方法。 该校正用于校正测量值中的测量场位置依赖性。 该方法包括执行周期性结构的第一和第二测量; 以及从所述第一测量和所述第二测量确定校正。 执行第一测量，其中所述目标相对于测量场处于正常测量位置。 相对于测量场，位移位置中的周期性结构执行第二测量，当所述目标相对于测量场在所述正常测量位置时，所述偏移位置包括另一个所述周期性结构的位置。

公开(公告)号：US20210364929A1

公开(公告)日：2021-11-25

申请号：US16973377

申请日：2019-06-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Duan-Fu Stephen HSU ,  Christoph Rene Konrad Cebulla HENNERKES ,  Rafael C. HOWELL ,  Zhan SHI ,  Xiaoyang Jason LI ,  Frank STAALS

IPC: G03F7/20

Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.

公开(公告)号：US20210149312A1

公开(公告)日：2021-05-20

申请号：US16644206

申请日：2018-08-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Mark John MASLOW ,  Koenraad VAN INGEN SCHENAU ,  Patrick WARNAAR ,  Abraham SLACHTER ,  Roy ANUNCIADO ,  Simon Hendrik Celine VAN GORP ,  Frank STAALS ,  Marinus JOCHEMSEN

IPC: G03F7/20 ,  H01L21/66 ,  G06T7/00

Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.

公开(公告)号：US20200249576A1

公开(公告)日：2020-08-06

申请号：US16635584

申请日：2018-07-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Patrick WARNAAR ,  Patricius Aloysius Jacobus TINNEMANS ,  Grzegorz GRZELA ,  Everhardus Cornelis MOS ,  Wim Tjibbo TEL ,  Marinus JOCHEMSEN ,  Bart Peter Bert SEGERS ,  Frank STAALS

IPC: G03F7/20

Abstract: A method includes obtaining, for each particular feature of a plurality of features of a device pattern of a substrate being created using a patterning process, a modelled or simulated relation of a parameter of the patterning process between a measurement target for the substrate and the particular feature; and based on the relation and measured values of the parameter from the metrology target, generating a distribution of the parameter across at least part of the substrate for each of the features, the distribution for use in design, control or modification of the patterning process.

公开(公告)号：US20190243259A1

公开(公告)日：2019-08-08

申请号：US16318388

申请日：2017-06-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Martin Jules Marie-Emile DE NIVELLE ,  Tanbir HASAN

IPC: G03F9/00 ,  G05B19/4097

CPC classification number: G03F9/7034 ,  G05B19/4097 ,  G05B2219/45028 ,  G05B2219/45031

Abstract: A method of determining topographical variation across a substrate on which one or more patterns have been applied. The method includes obtaining measured topography data representing a topographical variation across a substrate on which one or more patterns have been applied by a lithographic process; and combining the measured topography data with knowledge relating to intra-die topology to obtain derived topography data having a resolution greater than the resolution of the measured topography data. Also disclosed is a corresponding level sensor apparatus and lithographic apparatus having such a level sensor apparatus, and a more general method of determining variation of a physical parameter from first measurement data of variation of the physical parameter across the substrate and intra-die measurement data of higher resolution than the first measurement data and combining these.

公开(公告)号：US20190129319A1

公开(公告)日：2019-05-02

申请号：US16096360

申请日：2017-04-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Miguel GARCIA GRANDA ,  LEEWIS Marinus Christian ,  Frank STAALS

IPC: G03F9/00 ,  G03F7/20

CPC classification number: G03F7/705 ,  G03F7/70525 ,  G03F7/70533 ,  G03F7/70625 ,  G03F7/70633 ,  G03F7/70641 ,  G03F9/7019 ,  G03F9/7026 ,  G03F9/7046 ,  G03F9/7092

Abstract: A method including obtaining a measurement result from a target on a substrate, by using a substrate measurement recipe; determining, by a hardware computer system, a parameter from the measurement result, wherein the parameter characterizes dependence of the measurement result on an optical path length of the target for incident radiation used in the substrate measurement recipe and the determining the parameter includes determining dependence of the measurement result on a relative change of wavelength of the incident radiation; and if the parameter is not within a specified range, adjusting the substrate measurement recipe.

公开(公告)号：US20180224752A1

公开(公告)日：2018-08-09

申请号：US15579938

申请日：2016-05-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Frank STAALS ,  Mark John MASLOW

IPC: G03F7/20

CPC classification number: G03F7/70533 ,  G03F7/70525 ,  G03F7/70891 ,  H01L21/0274

Abstract: A method for adjusting a lithography process, wherein processing parameters of the lithography process include a first group of processing parameters and a second group of processing parameters, the method including: obtaining a change of the second group of processing parameters; determining a change of a sub- process window (sub-PW) as a result of the change of the second group of processing parameters, wherein the sub-PW is spanned by only the first group of processing parameters; and adjusting the first group of processing parameters based on the change of the sub-PW.

公开(公告)号：US20170023867A1

公开(公告)日：2017-01-26

申请号：US15214067

申请日：2016-07-19

Applicant: ASML Netherlands B.V.

Inventor： Frank STAALS ,  Carlo Cornelis Maria LUIJTEN ,  Paul Christiaan HINNEN ,  Anton Bernhard VAN OOSTEN

IPC: G03F7/20 ,  G01B11/27 ,  G01B11/02

CPC classification number: G03F7/70633 ,  G01B11/02 ,  G01B11/272 ,  G01B2210/56 ,  G03F7/70625 ,  G03F7/70641

Abstract: Disclosed is a method of monitoring a lithographic process parameter, such as focus and/or dose, of a lithographic process. The method comprises acquiring a first and a second target measurement using respectively a first measurement configuration and a second measurement configuration, and determining the lithographic process parameter from a first metric derived from said first target measurement and said second target measurement. The first metric may be difference. Also disclosed are corresponding measurement and lithographic apparatuses, a computer program and a method of manufacturing devices.

Abstract translation: 公开了一种监测光刻工艺参数的方法，例如光刻工艺的焦点和/或剂量。 该方法包括分别采用第一测量配置和第二测量配置获取第一和第二目标测量，以及根据从所述第一目标测量和所述第二目标测量导出的第一度量来确定光刻处理参数。 第一个度量可能是不同的。 还公开了相应的测量和光刻设备，计算机程序和制造设备的方法。

公开(公告)号：US20230021079A1

公开(公告)日：2023-01-19

申请号：US17953751

申请日：2022-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Frank STAALS

IPC: G03F7/20

Abstract: A method for controlling a lithographic apparatus, and associated apparatuses. The method is configured to provide product structures to a substrate in a lithographic process and includes determining optimization data. The optimization data includes measured and/or simulated data of at least one performance parameter associated with the product structures and/or their arrangement which are to be applied to the substrate in the lithographic process. Substrate specific metrology data as measured and/or modelled before the providing of product structures to the substrate is determined, the substrate specific metrology data including metrology data relating to a characteristic of the substrate to which the structures are being applied and/or the state of the lithographic apparatus at the time that the structures are applied to the substrate. The method further includes optimizing control of the lithographic apparatus during the lithographic process based on the optimization data and the substrate specific metrology data.