公开(公告)号：US20150357171A1

公开(公告)日：2015-12-10

申请号：US14707825

申请日：2015-05-08

Applicant: APPLIED MATERIALS, INC.

Inventor： XIANMIN TANG ,  JOUNG JOO LEE ,  GUOJUN LIU

IPC: H01J37/34 ,  C23C14/35 ,  H01L21/02

CPC classification number: H01J37/3447 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/345 ,  H01J37/3452 ,  H01J2237/3322 ,  H01L21/02104

Abstract: Methods and apparatus for improved metal ion filtering are provided herein. In some embodiments, a substrate processing apparatus includes: a chamber body and a chamber lid disposed on the chamber body defining a processing region within the chamber body beneath the lid; a collimator disposed in the processing region; a power source coupled to the collimator; and a first set of magnets disposed around the chamber body above the collimator and a second set of magnets disposed around the chamber body and below the collimator that together create a guidance magnetic field that is substantially orthogonal to the collimator.

Abstract translation: 本文提供了改进金属离子过滤的方法和装置。 在一些实施例中，基板处理装置包括：室主体和设置在室主体上的室盖，其限定盖体下方的室主体内的处理区域; 设置在处理区域中的准直器; 耦合到所述准直器的电源; 以及设置在准直器上方的腔室主体周围的第一组磁体和设置在腔室主体周围并在准直器下方的第二组磁体，其一起产生基本上与准直器正交的引导磁场。

公开(公告)号：US20180294162A1

公开(公告)日：2018-10-11

申请号：US15482198

申请日：2017-04-07

Applicant: APPLIED MATERIALS, INC.

Inventor： XIANGJIN XIE ,  ADOLPH MILLER ALLEN ,  XIANMIN TANG ,  GOICHI YOSHIDOME

IPC: H01L21/285 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3215 ,  H01L21/67 ,  H01L21/768 ,  H01L23/532 ,  C23C14/34 ,  C23C14/02 ,  C23C16/455 ,  C23C14/54

Abstract: Atomic layer deposition (ALD) processes are combined with physical vapor deposition (PVD) processes in a low pressure environment to produce a high quality barrier film. The initial barrier film is deposited on a substrate using ALD processes and then moved to a PVD chamber to treat the barrier film to increase the barrier film's density and purity, decreasing the barrier film's resistivity. A dual source of materials is sputtered onto the substrate to provide doping while a gas is simultaneously used to etch the substrate to release nitrogen. At least one source of material is positioned to provide doping at an acute angle to the surface of the substrate while supplied with DC power and RF power at a first RF power frequency. The substrate is biased using RF power at a second RF power frequency.

公开(公告)号：US20160240483A1

公开(公告)日：2016-08-18

申请号：US15041454

申请日：2016-02-11

Applicant: APPLIED MATERIALS, INC.

Inventor： YANA CHENG ,  YONG CAO ,  SRINIVAS GUGGILLA ,  SREE RANGASAI KESAPRAGADA ,  XIANMIN TANG ,  DEENESH PADHI

IPC: H01L23/532 ,  H01L23/528 ,  H01L21/768

CPC classification number: H01L23/53238 ,  C23C14/0036 ,  C23C14/0676 ,  C23C14/352 ,  H01J37/32504 ,  H01J37/3408 ,  H01J37/3455 ,  H01L21/02145 ,  H01L21/02266 ,  H01L21/76802 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/53223 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295

Abstract: Interconnect structures and methods of formation of such interconnect structures are provided herein. In some embodiments, a method of forming an interconnect includes: depositing a silicon-aluminum oxynitride (SiAlON) layer atop a first layer of a substrate, wherein the first layer comprises a first feature filled with a first conductive material; depositing a dielectric layer over the silicon-aluminum oxynitride (SiAlON) layer; and forming a second feature in the dielectric layer and the silicon-aluminum oxynitride (SiAlON) layer to expose the first conductive material.

Abstract translation: 本文提供互连结构和形成这种互连结构的方法。 在一些实施例中，形成互连的方法包括：在衬底的第一层的顶部沉积硅 - 铝氮氧化物（SiAlON）层，其中第一层包括填充有第一导电材料的第一特征; 在硅 - 铝氮氧化物（SiAlON）层上沉积介电层; 以及在介电层和硅铝氧氮化物（SiAlON）层中形成第二特征以暴露第一导电材料。

公开(公告)号：US20150075980A1

公开(公告)日：2015-03-19

申请号：US14486223

申请日：2014-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： THANH NGUYEN ,  RONGJUN WANG ,  MUHAMMAD M. RASHEED ,  XIANMIN TANG

IPC: H01J37/32 ,  C23C14/34

CPC classification number: H01J37/3441 ,  C23C14/34 ,  C23C14/564

Abstract: Apparatus for physical vapor deposition are provided. In some embodiments, an apparatus for use in a physical vapor deposition substrate processing chamber includes a process shield having a central opening passing through a body of the process shield and defining a processing volume of the substrate processing chamber, wherein the process shield comprises an annular dark space shield fabricated from a ceramic material and an annular ground shield fabricated from a conductive material, and wherein a ratio of a length of the annular dark space shield to a length of the annular ground shield is about 2:1 to about 1.6:1.

Abstract translation: 提供了用于物理气相沉积的装置。 在一些实施例中，用于物理气相沉积基板处理室的装置包括具有穿过过程屏蔽体的中心开口并限定基板处理室的处理体积的过程屏蔽，其中过程屏蔽包括环形 由陶瓷材料制成的暗空间屏蔽和由导电材料制成的环形接地屏蔽，并且其中所述环形暗空间屏蔽件的长度与所述环形接地屏蔽件的长度的比率为约2:1至约1.6:1 。

公开(公告)号：US20220359209A1

公开(公告)日：2022-11-10

申请号：US17869496

申请日：2022-07-20

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees C.; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

公开(公告)号：US20200255937A1

公开(公告)日：2020-08-13

申请号：US16541688

申请日：2019-08-15

Applicant: APPLIED MATERIALS, INC.

Inventor： BENCHERKI MEBARKI ,  BYEONG CHAN LEE ,  HUIXIONG DAI ,  TEJINDER SINGH ,  JOUNG JOO LEE ,  XIANMIN TANG

IPC: C23C14/54 ,  H01L21/02 ,  C23C14/34 ,  C23C14/58

Abstract: Methods and apparatus for processing a substrate. The method, for example, includes directing a stream of material from a PVD source at a first non-perpendicular angle to selectively deposit the material on a top portion of one or more features on the substrate and form a first overhang and a second overhang extending beyond a third sidewall and a fourth sidewall that are arranged parallel and opposite to each other and at non-zero angles to a first sidewall and a second sidewall, the first sidewall and the second sidewall defining a length of the one or more features, and the third sidewall and fourth sidewall defining a width of the one or more features; performing an etch process to selectively remove some of the first sidewall and the second sidewall while keeping the third sidewall and fourth sidewall in intact and maintaining the width of the one or more features.

公开(公告)号：US20200211852A1

公开(公告)日：2020-07-02

申请号：US16705119

申请日：2019-12-05

Applicant: APPLIED MATERIALS, INC.

Inventor： TAKASHI KURATOMI ,  I-CHENG CHEN ,  AVGERINOS V. GELATOS ,  PINGYAN LEI ,  MEI CHANG ,  XIANMIN TANG

IPC: H01L21/285 ,  H01J37/32 ,  C23C16/42

Abstract: Methods and apparatus for selectively depositing a titanium material layer atop a substrate having a silicon surface and a dielectric surface are disclosed. In embodiments an apparatus is configured for forming a remote plasma reaction between titanium tetrachloride (TiCl4), hydrogen (H2) and argon (Ar) in a region between a lid heater and a showerhead of a process chamber at a first temperature of 200 to 800 degrees Celsius; and flowing reaction products into the process chamber to selectively form a titanium material layer upon the silicon surface of the substrate.

公开(公告)号：US20200051795A1

公开(公告)日：2020-02-13

申请号：US16285043

申请日：2019-02-25

Applicant: APPLIED MATERIALS, INC.

Inventor： CHAO DU ,  YONG CAO ,  CHEN GONG ,  MINGDONG LI ,  FUHONG ZHANG ,  RONGJUN WANG ,  XIANMIN TANG

IPC: H01J37/34 ,  C23C14/34 ,  H01J37/32

Abstract: Embodiments of a process chamber are provided herein. In some embodiments, a process chamber includes a chamber body having an interior volume, a substrate support disposed in the interior volume, a target disposed within the interior volume and opposing the substrate support, a process shield disposed in the interior volume and having an upper portion surrounding the target and a lower portion surrounding the substrate support, the upper portion having an inner diameter that is greater than an outer diameter of the target to define a gap between the process shield and the target, and a gas inlet to provide a gas to the interior volume through the gap or across a front opening of the gap to substantially prevent particles from the interior volume from entering the gap during use.

公开(公告)号：US20190122924A1

公开(公告)日：2019-04-25

申请号：US16222630

申请日：2018-12-17

Applicant: APPLIED MATERIALS, INC.

Inventor： JIN HEE PARK ,  TAE HONG HA ,  SANG-HYEOB LEE ,  THOMAS JONGWAN KWON ,  JAESOO AHN ,  XIANMIN TANG ,  ER-XUAN PING ,  SREE KESAPRAGADA

IPC: H01L21/768 ,  H01L21/67 ,  C23C16/04 ,  C23C16/455 ,  C23C16/48 ,  H01L21/285 ,  H01L23/532 ,  C23C16/56 ,  C23C16/18 ,  C23C16/16

CPC classification number: H01L21/76879 ,  C23C16/045 ,  C23C16/16 ,  C23C16/18 ,  C23C16/45512 ,  C23C16/45561 ,  C23C16/481 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76882 ,  H01L21/76883 ,  H01L23/53209 ,  H01L27/11556 ,  H01L27/11582

Abstract: Methods and apparatus for depositing a cobalt layer in a feature, such as, a word line formed in a substrate, are provided herein. In some embodiments, method of processing a substrate includes: exposing a substrate at a first temperature to a cobalt containing precursor to deposit a cobalt layer within a word line feature formed in the substrate, wherein the word line feature is part of a 3D NAND device; and annealing the substrate to remove contaminants from the cobalt layer and to reflow the cobalt layer into the word line feature, wherein the substrate is at a second temperature greater than the first temperature during the annealing.

公开(公告)号：US20180087147A1

公开(公告)日：2018-03-29

申请号：US15830924

申请日：2017-12-04

Applicant: APPLIED MATERIALS, INC.

Inventor： MUHAMMAD RASHEED ,  RONGJUN WANG ,  ZHENDONG LIU ,  XINYU FU ,  XIANMIN TANG

IPC: C23C14/35 ,  C23C14/56 ,  H01J37/32 ,  H01J37/34

Abstract: Apparatus for improved particle reduction are provided herein. In some embodiments, an apparatus may include a process kit shield comprising a one-piece metal body having an upper portion and a lower portion and having an opening disposed through the one-piece metal body, wherein the upper portion includes an opening-facing surface configured to be disposed about and spaced apart from a target of a physical vapor deposition chamber and wherein the opening-facing surface is configured to limit particle deposition on an upper surface of the upper portion of the one-piece metal body during sputtering of a target material from the target of the physical vapor deposition chamber.