公开(公告)号：US20250022694A1

公开(公告)日：2025-01-16

申请号：US18762865

申请日：2024-07-03

Applicant: Applied Materials, Inc.

Inventor： Pranav Vijay Gadre ,  Adib M. Khan ,  Qiwei Liang ,  Dmitry Lubomirsky ,  Hyun Joo Lee ,  Paneendra Prakash Bhat ,  Douglas A. Buchberger, JR. ,  Onkara Swamy Korasiddaramaiah ,  Vijay D. Parkhe ,  Junghoon Kim ,  Kallol Bera ,  Rupali Sahu ,  Sathya Swaroop Ganta

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/509 ,  H05B6/54 ,  H05B6/62

Abstract: A substrate support assembly includes a heater plate including a dielectric material, a heater electrode embedded within the heater plate, a set of distributed purge channels formed within the heater plate, wherein the set of distributed purge channels provides a set of gas flow paths to equalize a gas flow from within the heater plate and direct the gas flow in a direction below the heater plate, a ground electrode embedded within the heater plate, and a radio frequency (RF) mesh embedded within the plate.

公开(公告)号：US20220028710A1

公开(公告)日：2022-01-27

申请号：US16934227

申请日：2020-07-21

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Yang Guo ,  Seyyed Abdolreza Fazeli ,  Nitin Pathak ,  Badri N. Ramamurthi ,  Kallol Bera ,  Xiaopu Li ,  Philip A. Kraus ,  Swaminathan T. Srinivasan

IPC: H01L21/67 ,  B65G47/90

Abstract: Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body along a first surface of the first lid plate. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of apertures of the plurality of apertures defined through the first lid plate. The systems may include a plurality of isolators. An isolator of the plurality of isolators may be positioned between each lid stack of the plurality of lid stacks and a corresponding aperture of the plurality of apertures defined through the first lid plate. The systems may include a plurality of dielectric plates. A dielectric plate of the plurality of dielectric plates may be seated on each isolator of the plurality of isolators.

公开(公告)号：US11081317B2

公开(公告)日：2021-08-03

申请号：US15958470

申请日：2018-04-20

Applicant: Applied Materials, Inc.

Inventor： Thai Cheng Chua ,  Christian Amormino ,  Hanh Nguyen ,  Kallol Bera ,  Philip Allan Kraus

IPC: H01J37/32 ,  H03F3/19 ,  H03F3/21

Abstract: Embodiments include a modular high-frequency emission source. In an embodiment, the modular high-frequency emission source includes a plurality of high-frequency emission modules, where each high-frequency emission module comprises an oscillator module, an amplification module, and an applicator. In an embodiment the oscillator module comprises a voltage control circuit and a voltage controlled oscillator. In an embodiment, the amplification module is coupled to the oscillator module. In an embodiment, the applicator is coupled to the amplification module. In an embodiment, each high-frequency emission module includes a different oscillator module.

公开(公告)号：US10763085B2

公开(公告)日：2020-09-01

申请号：US16220825

申请日：2018-12-14

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Dmitry A. Dzilno ,  Anantha K. Subramani ,  John C. Forster ,  Tsutomu Tanaka

IPC: H01J37/32

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode. The RF hot electrode can include a leg and optional triangular portion near the leg that extends at an angle to the body of the RF hot electrode. A cladding material on one or more of the RF hot electrode and the return electrode can be variably spaced or have variable properties along the length of the plasma gap.

公开(公告)号：US20200255943A1

公开(公告)日：2020-08-13

申请号：US16860458

申请日：2020-04-28

Applicant: Applied Materials, Inc.

Inventor： Aaron Miller ,  Kallol Bera

IPC: C23C16/455

Abstract: Apparatus and methods for processing a substrate including an injector unit insert with a plurality of flow paths leading to a first plenum, each of the flow paths providing one or more of substantially the same residence time, length and/or conductance. Injector units including the injector unit inserts have increased flow uniformity.

公开(公告)号：US20180330927A1

公开(公告)日：2018-11-15

申请号：US15980158

申请日：2018-05-15

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera ,  Anantha K. Subramani ,  John C. Forster ,  Philip A. Kraus ,  Farzad Houshmand ,  Hanhong Chen

IPC: H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01J37/32715 ,  C23C16/45544 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32541 ,  H01J37/32559 ,  H01J37/32568 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67017 ,  H01L21/68764 ,  H01L21/68771

Abstract: Plasma source assemblies comprising an RF hot electrode having a body and at least one return electrode spaced from the RF hot electrode to provide a gap in which a plasma can be formed. An RF feed is connected to the RF hot electrode at a distance from the inner peripheral end of the RF hot electrode that is less than or equal to about 25% of the length of the RF hot electrode.

公开(公告)号：US20170148626A1

公开(公告)日：2017-05-25

申请号：US15353315

申请日：2016-11-16

Applicant: Applied Materials, Inc.

Inventor： Anantha K. Subramani ,  Kaushal Gangakhedkar ,  Abhishek Chowdhury ,  John C. Forster ,  Nattaworn Nuntaworanuch ,  Kallol Bera ,  Philip A. Kraus ,  Farzad Houshmand

IPC: H01L21/02 ,  H01L21/687 ,  H01L21/285

CPC classification number: H01L21/0234 ,  C23C16/45536 ,  C23C16/45551 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: Plasma source assemblies comprising a housing with an RF hot electrode and a return electrode are described. The housing includes a gas inlet and a front face defining a flow path. The RF hot electrode includes a first surface oriented substantially parallel to the flow path. The return electrode includes a first surface oriented substantially parallel to the flow path and spaced from the first surface of the RF hot electrode to form a gap. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

公开(公告)号：US20160068958A1

公开(公告)日：2016-03-10

申请号：US14785009

申请日：2014-04-10

Applicant: Umesh M KELKAR ,  Kallol BERA ,  Karthik RAMANATHAN ,  Garry K KWONG ,  Joseph YUDOVSKY ,  Applied Materials, Inc.

Inventor： Umesh M. Kelkar ,  Kallol Bera ,  Karthik Ramanathan ,  Garry K Kwong ,  Joseph Yudovsky

IPC: C23C16/46 ,  C23C16/458 ,  C23C16/455

CPC classification number: C23C16/46 ,  C23C16/45544 ,  C23C16/4584 ,  C23C16/481 ,  C23C16/52 ,  H01L21/67115

Abstract: Apparatus and methods for processing a plurality of semiconductor wafers on a susceptor assembly so that the temperature across the susceptor assembly is uniform are described. A plurality of linear lamps are positioned and controlled in zones to provide uniform heating.

Abstract translation: 描述了在基座组件上处理多个半导体晶片的装置和方法，使得基座组件上的温度是均匀的。 多个线性灯被定位和控制在区域中以提供均匀的加热。

公开(公告)号：US20150262792A1

公开(公告)日：2015-09-17

申请号：US14215563

申请日：2014-03-17

Applicant: Applied Materials, Inc.

Inventor： Kallol Bera

IPC: H01J37/32

CPC classification number: H01J37/32128 ,  H01J7/24 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32541 ,  H01J37/32577 ,  H01J2237/3321

Abstract: A plasma source assembly for use with a processing chamber is described. The assembly includes a multi-feed RF power connection to a single or multiple RF hot electrodes.

Abstract translation: 描述了一种与处理室一起使用的等离子体源组件。 组件包括到单个或多个RF热电极的多馈RF功率连接。

公开(公告)号：US20240249924A1

公开(公告)日：2024-07-25

申请号：US18158379

申请日：2023-01-23

Applicant: Applied Materials, Inc.

Inventor： Jian Li ,  Kallol Bera ,  Edward P. Hammond ,  Dmitry A. Dzilno ,  Juan Carlos Rocha-Alvarez ,  Xiaopu Li

IPC: H01J37/32 ,  C23C16/458 ,  H01L21/683

CPC classification number: H01J37/32724 ,  C23C16/4586 ,  H01J37/32082 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01L21/6833 ,  H01J2237/2007 ,  H01J2237/332

Abstract: Exemplary substrate support assemblies may include an electrostatic chuck body defining a substrate support surface that defines a substrate seat. The assemblies may include a support stem coupled with the electrostatic chuck body. The assemblies may include a first bipolar electrode embedded within the electrostatic chuck body. The assemblies may include a second bipolar electrode embedded within the electrostatic chuck body. An entirety of the second bipolar electrode may be radially inward of at least a portion of the first bipolar electrode. The first bipolar electrode and the second bipolar electrode may be coaxial with one another. Each of the first bipolar electrode and the second bipolar electrode may be coupled with at least one RF power supply. Each of the first bipolar electrode and the second bipolar electrode may be coupled with at least one DC power supply.