摘要:
A toner is provided which is excellent in low-temperature fixability and offset resistance, has a wide fixing temperature range, provides fixed images with high gloss, and can form toner images having high quality. The toner is composed of toner particles having toner base particles each containing a binder resin and a colorant. When the viscosities of each of the toner particles measured at 100° C. and 110° C. by a flow tester heat-up method are represented by η100 (Pa·s) and η110 (Pa·s), respectively, an average variation in viscosity AηT represented by the following equation (1) satisfies the relationship of 0≧AηT≧−0.064: AηT=(log(η110)−log(η100)/(110−100); and (1) η100 is 15,000 to 40,000 Pa·s.
摘要:
An image forming system comprising a plurality of image forming apparatuses interconnected via a network, wherein an image forming apparatus is capable of transmitting image data to another image forming apparatus, and the image forming apparatus capable of transmitting the image data comprising: a transmitter that transmits image data to another image forming apparatus; a job log information storage; and a job administrator that gives a job ID to job log information indicating a job executed on the image data then stores the job log information in said job information storage, and gives a job ID that is the same as or related to the job ID given to the job log information, to the image data to be transmitted by said transmitter, and the image forming apparatus receiving the image data comprising: a receiver that receives image data with a job ID, which is transmitted from another image forming apparatus; a job log information storage; and a job administrator that gives a job ID that is the same as or related to said job ID given to the image data received by said receiver, to job log information indicating a job executed on the image data, then stores the job log information in said job log information storage.
摘要:
An image processing device is disclosed, in which the data on a job, a password related to the job and the information specifying whether the input of the password is required to control the job are stored. In the image processing device, the information is stored to specify that the input of the password is not required to control a predetermined job in the case where a predetermined condition is met for the predetermined job.
摘要:
A solar cell including a light-absorption layer of a compound semiconductor with a chalcopyrite crystal structure and having excellent characteristics such as conversion efficiency is provided. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer interposed between the first electrode layer and the second electrode layer, and an n-type semiconductor layer interposed between the p-type semiconductor layer and the second electrode layer. The p-type semiconductor layer includes a compound semiconductor containing a group Ib element, a group IIIb element and a group VI element and having a chalcopyrite structure. The bandgap of the p-type semiconductor layer increases from the n-type semiconductor layer side to the first electrode layer side monotonically. The bandgap of the p-type semiconductor layer on the main surface at the n-type semiconductor layer side is at least 1.08 eV, and the bandgap of the p-type semiconductor layer on the main surface at the first electrode layer side is at least 1.17 eV. In the p-type semiconductor layer, a first region at the n-type semiconductor layer side and a second region at the first electrode layer side are different from each other in bandgap increase rate in a direction of thickness of the p-type semiconductor layer.
摘要翻译:提供一种太阳能电池,其包括具有黄铜矿晶体结构的化合物半导体的光吸收层,并且具有优异的特性如转换效率。 太阳能电池包括第一电极层,第二电极层,介于第一电极层和第二电极层之间的p型半导体层,以及插入在p型半导体层和第二电极层之间的n型半导体层 电极层。 p型半导体层包括含有Ib族元素,IIIb族元素和VI族元素并具有黄铜矿结构的化合物半导体。 p型半导体层的带隙从n型半导体层侧单调增加到第一电极层侧。 n型半导体层侧的主面上的p型半导体层的带隙为1.08eV以上,第一电极层侧的主面上的p型半导体层的带隙为至少 1.17 eV 在p型半导体层中,在p型半导体层的厚度方向上的n型半导体层侧的第一区域和第一电极层侧的第二区域的带隙增加率彼此不同 。
摘要:
In a non-magnetic toner having non-magnetic toner particles containing at least a binder resin and a colorant, and an inorganic fine powder, the non-magnetic toner particles contain at least one ether compound having a specific structure, and the ether compound is in a content of from 5 ppm to 1,000 ppm.
摘要:
The present invention is aimed at providing a sliding contact material that has an alloy composition containing no harmful substance like Cd, especially excellent contact resistance properties, electrical functions that are good and is not subject to secular change, and abrasion resistance practically bearing comparison with conventional sliding contact materials, and is aimed at lengthening the life of a motor by the use of a sliding contact material having excellent durability as a commutator for a small direct-current motor. The present invention is a sliding contact material of an Ag—Ni-based alloy that is used in sliding part electrically switching on and off by mechanical sliding action, and the material is a sliding contact material of Ni metal particle-dispersed-type Ag—Ni-based alloy that is produced in such a method that 0.7 to 3.0 wt. % Ni powder, an additive of Li2CO3 powder corresponding to 0.01 to 0.50 wt. % Li after being converted to metal and the balance of Ag powder are mixed and stirred to form a uniformly dispersed mixture, then the mixture is treated with forming and sintering processes.
摘要:
The present invention includes a substrate, a lower electrode film, a p-type semiconductor layer (a second semiconductor layer), an n-type semiconductor layer (a first semiconductor layer), an upper electrode film and an anti-reflection film, which are stacked sequentially on the substrate in this order, and an interconnection electrode formed on the upper electrode film. The first semiconductor layer is free from Cd, and the second semiconductor layer is a light-absorption layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy a relationship: Eg1>Eg2. The electron affinity &khgr;1 (eV) of the first semiconductor layer and an electron affinity &khgr;2 (eV) of the second semiconductor layer satisfy a relationship: 0≦(&khgr;2−&khgr;1)
摘要:
A trimming circuit for a semiconductor device performs both simulated fuse breakage and actual fuse breakage by selectively short-circuiting an adjusted device. The trimming circuit includes a switch connected in parallel with the adjusted device. Activating the switch causes the adjusted device to be by-passed or short-circuited. A first external terminal is connected to the switch to apply a first control signal to the switch. A second external terminal is provided for receiving a second control signal. A fuse circuit is connected between a high potential power supply and a low potential power supply and between the first and second external terminals. For hypothetical fuse breakage, the first control signal is activated to activate the switch and by-pass the adjusted device. For actual fuse breakage, the second control signal is activated such that it has a potential greater than the first control signal so that a current flows through the fuse circuit, thereby breaking the fuse. When the fuse is broken, the switch is activated, thereby causing the adjusted device to be by-passed.
摘要:
A solar cell utilizing a chalcopyrite semiconductor and reducing the density of defects on the junction interface of pn junctions is provided. This solar cell includes a substrate, a back electrode formed on the substrate, a p-type chalcopyrite semiconductor thin film formed on the back electrode, an n-type semiconductor thin film formed so as to constitute a pn junction with the p-type chalcopyrite semiconductor thin film, and a transparent electrode formed on the n-type semiconductor thin film. A material having a higher resistivity than the p-type chalcopyrite semiconductor is formed between the p-type chalcopyrite semiconductor thin film and the n-type semiconductor thin film. A thin film made of this material may be formed by deposition from a solution. For example, CuInS.sub.2 is formed on the surface of a p-type chalcopyrite based semiconductor such as CuInSe.sub.2 by contacting the surface of the semiconductor with a solution in which a salt containing group IIIb elements, an organic substance containing group VIb elements and acid are mixed.
摘要:
In a maintenance management system in which communications control devices of electronic photocopiers are connected through public telephone lines or the like with a host computer of a maintenance company that manages the photocopiers, preventive-maintenance-oriented, omission-free instructions for maintenance work are obtained by determining items of work to be performed based on how many times maintenance has been performed or based on a count of copies produced. For example, in the case where maintenance work to be performed on a first occasion includes items of work belonging to a work item setting area of a second order of precedence within a maintenance table, if items of work that need to be performed do not agree with those specified in the table, items of work of a first order of precedence are added. To achieve this, based on a count at a moment, a work item setting area in the maintenance table is judged to determine its array number, a maintenance state flag is judged, and the array number is incremented by one, so that instructions of the second order of precedence are indicated. Then, the array number of the area is decremented by one, and the flag is judged to be OFF, so that items of work of first order are added to those of the second order. Next, duplicated items within the same area are deleted, whether replacement is necessary or not is judged, and then it is determined that maintenance on the next occasion includes items of work of the first and second orders of precedence.