公开(公告)号：US20070056316A1

公开(公告)日：2007-03-15

申请号：US10982561

申请日：2004-11-05

Applicant: Wilhelm Platow ,  John Cracchiolo ,  Stanislav Todorov ,  Jaime Reyes

Inventor： Wilhelm Platow ,  John Cracchiolo ,  Stanislav Todorov ,  Jaime Reyes

IPC: C02F1/22

CPC classification number: C02F1/22 ,  C02F1/20 ,  C02F2301/063 ,  H01J2237/022 ,  H01J2237/31705

Abstract: The present invention provides methods and apparatus for the production of liquids and vapors that are free of, or substantially free of, dissolved or trapped gases. In one embodiment, a liquid is placed in a sealed vessel and subjected to a temperature below the freezing point of the liquid for sufficient time to substantially, if not completely, turn the liquid into a solid. Concurrent with or subsequent to the cooling of the liquid, the interior of the vessel is subjected to a vacuum so as to evacuate all or substantially all of the gaseous atmosphere. Thereafter, the vessel is heated to a temperature above the melting point of the liquid, allowing the frozen material to return to its liquid form or sublimate to form a vapor.

Abstract translation: 本发明提供了用于生产不含或基本上不含溶解或捕获的气体的液体和蒸汽的方法和装置。 在一个实施方案中，将液体置于密封容器中并经受低于液体凝固点的温度足够的时间以基本上（如果不是完全）将液体转化为固体。 与液体冷却同时或之后，容器的内部经受真空，以排出所有或基本上全部的气体气氛。 此后，将容器加热到高于液体熔点的温度，使冷冻的材料返回其液体形式或升华以形成蒸气。

公开(公告)号：US20070045570A1

公开(公告)日：2007-03-01

申请号：US11394825

申请日：2006-03-31

Applicant: Craig Chaney ,  Russell Low ,  Jonathan England

Inventor： Craig Chaney ,  Russell Low ,  Jonathan England

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/022 ,  H01J2237/082 ,  H01J2237/0822 ,  H01J2237/0827 ,  H01J2237/31705

Abstract: A technique for improving ion implanter productivity is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving productivity of an ion implanter having an ion source chamber. The method may comprise supplying a gaseous substance to the ion source chamber, the gaseous substance comprising one or more reactive species for generating ions for the ion implanter. The method may also comprise stopping the supply of the gaseous substance to the ion source chamber. The method may further comprise supplying a hydrogen containing gas to the ion source chamber for a period of time after stopping the supply of the gaseous substance.

Abstract translation: 公开了一种改善离子注入机生产率的技术。 在一个特定的示例性实施例中，该技术可以被实现为用于提高具有离子源室的离子注入机的生产率的方法。 该方法可以包括向离子源室供应气态物质，该气态物质包含用于产生用于离子注入机的离子的一种或多种反应性物质。 该方法还可以包括停止向离子源室供应气态物质。 该方法还可以包括在停止供应气态物质后的一段时间内向离子源室供应含氢气体。

公开(公告)号：US07173260B2

公开(公告)日：2007-02-06

申请号：US11022060

申请日：2004-12-22

Applicant: Maria J. Anc ,  Dale K. Stone ,  Christopher T. Reddy

Inventor： Maria J. Anc ,  Dale K. Stone ,  Christopher T. Reddy

IPC: G21G5/00 ,  H01L21/76

CPC classification number: H01J37/3171 ,  H01J37/165 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/31705

Abstract: An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The implanter includes one or more removable inserts mounted to an interior of either the transport system or the ion implantation chamber for collecting material entering either the transport system or the ion implantation chamber due to collisions between ions and the workpiece within the ion implantation chamber during ion processing of the workpiece. A temperature control coupled to the one or more removable inserts for maintaining the temperature of the insert at a controlled temperature to promote formation of a film on said insert during ion treatment due to collisions between ions and said workpiece.

Abstract translation: 一种离子注入机，其具有源，工件支撑和用于将离子从源输送到包含工件支撑件的离子注入室的输送系统。 注入机包括一个或多个可拆卸的插入件，其安装到输送系统或离子注入室的内部，用于收集进入输送系统或离子注入室的材料，这是由于离子和离子注入室内的工件之间的离子在离子 加工工件。 耦合到一个或多个可移除插入件的温度控制器，用于将插入件的温度保持在受控温度，以促进在离子处理期间由于离子和所述工件之间的碰撞而在所述插入件上形成膜。

公开(公告)号：US07170067B2

公开(公告)日：2007-01-30

申请号：US11093930

申请日：2005-03-30

Applicant: Anthony Renau ,  Eric Hermanson ,  Joseph C. Olson ,  Gordon Angel

Inventor： Anthony Renau ,  Eric Hermanson ,  Joseph C. Olson ,  Gordon Angel

IPC: H01J49/00

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/24405 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

Abstract translation: 本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。 本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。 本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极， 正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

公开(公告)号：US20060284117A1

公开(公告)日：2006-12-21

申请号：US11445677

申请日：2006-06-02

Applicant: John Vanderpot ,  Yongzhang Huang

Inventor： John Vanderpot ,  Yongzhang Huang

IPC: H01J37/08

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination during ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and travels through the mass analyzer to the end station. An ion beam dump assembly comprising a particle collector, particle attractor, and shield are associated with the mass analyzer, wherein an electrical potential of the particle attractor is operable to attract and constrain contamination particles within the particle collector, and wherein the shield is operable to shield the electrical potential of the particle attractor from an electrical potential of an ion beam within the mass analyzer.

公开(公告)号：US20060284071A1

公开(公告)日：2006-12-21

申请号：US11445722

申请日：2006-06-02

Applicant: John Vanderpot ,  Yongzhang Huang

Inventor： John Vanderpot ,  Yongzhang Huang

IPC: B01D59/44

CPC classification number: H01J37/244 ,  H01J37/045 ,  H01J37/09 ,  H01J37/302 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/026 ,  H01J2237/028 ,  H01J2237/30433 ,  H01J2237/31705

Abstract: A system, method, and apparatus for mitigating contamination associated with ion implantation are provided. An ion source, end station, and mass analyzer positioned between the ion source and the end station are provided, wherein an ion beam is formed from the ion source and selectively travels through the mass analyzer to the end station, based on a position of a beam stop assembly. The beam stop assembly selectively prevents the ion beam from entering and/or exiting the mass analyzer, therein minimizing contamination associated with an unstable ion source during transition periods such as a start-up of the ion implantation system.

公开(公告)号：US20060192134A1

公开(公告)日：2006-08-31

申请号：US11093930

申请日：2005-03-30

Applicant: Anthony Renau ,  Eric Hermanson ,  Joseph Olson ,  Gordon Angel

Inventor： Anthony Renau ,  Eric Hermanson ,  Joseph Olson ,  Gordon Angel

IPC: G01K1/08

CPC classification number: H01J37/244 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/24405 ,  H01J2237/31703 ,  H01J2237/31705

Abstract: The present invention provides a combined electrostatically suppressed Faraday and energy contamination monitor and related methods for its use. The apparatus of the present invention is capable of selectively measuring two properties of an ion beam, including, for example, a current and a level of energy contamination in a decelerated ion beam. A first aspect of the invention provides an ion beam measurement apparatus comprising an aperture for receiving the ion beam, a negatively biased electrode disposed adjacent to the aperture, a positively biased electrode disposed adjacent to the negatively biased electrode, a selectively biased electrode disposed adjacent to the positively biased electrode, and a collector, wherein the selectively biased electrode may selectively be negatively biased or positively biased.

Abstract translation: 本发明提供了一种组合静电抑制法拉第和能量污染监测器及其使用的相关方法。 本发明的装置能够选择性地测量离子束的两个特性，包括例如减速离子束中的电流和能量污染水平。 本发明的第一方面提供了一种离子束测量装置，其包括用于接收离子束的孔，邻近孔径设置的负偏置电极，邻近负偏置电极设置的正偏置电极， 正偏置电极和集电极，其中选择性偏置电极可以选择性地被负偏置或正偏置。

公开(公告)号：US07022999B2

公开(公告)日：2006-04-04

申请号：US10825339

申请日：2004-04-15

Applicant: Thomas Neil Horsky ,  John Noel Williams

Inventor： Thomas Neil Horsky ,  John Noel Williams

IPC: H01J37/08

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: A multi mode ion source is disclosed that includes an ion source incorporating an ionization chamber for ionizing gas species and configured to have at least two discrete modes of operation; namely, an arc-discharge mode and a non-arc discharge mode of operation.

Abstract translation: 公开了一种多模式离子源，其包括离子源，该离子源包括用于电离气体种类并被配置为具有至少两个离散模式的操作的电离室; 即电弧放电模式和非电弧放电操作模式。

公开(公告)号：US20050269520A1

公开(公告)日：2005-12-08

申请号：US11174107

申请日：2005-07-01

Applicant: Thomas Horsky ,  John Williams

Inventor： Thomas Horsky ,  John Williams

IPC: H01J27/20 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: Various aspects of the invention provide improved approaches and methods for efficiently: Vaporizing decaborane and other heat-sensitive materials via a novel vaporizer and vapor delivery system; Delivering a controlled, low-pressure drop flow of vapors, e.g. decaborane, into the ion source; Ionizing the decaborane into a large fraction of B10Hx+; Preventing thermal dissociation of decaborane; Limiting charge-exchange and low energy electron-induced fragmentation of B10Hx+; Operating the ion source without an arc plasma, which can improve the emittance properties and the purity of the beam; Operating the ion source without use of a strong applied magnetic field, which can improve the emittance properties of the beam; Using a novel approach to produce electron impact ionizations without the use of an arc discharge, by incorporation of an externally generated, broad directional electron beam which is aligned to pass through the ionization chamber to a thermally isolated beam dump; Providing production-worthy dosage rates of boron dopant at the wafer; Providing a hardware design that enables use also with other dopants, especially using novel hydride, dimer-containing, and indium- or antimony-containing temperature-sensitive starting materials, to further enhance the economics of use and production worthiness of the novel source design and in many cases, reducing the presence of contaminants; Matching the ion optics requirements of the installed base of ion implanters in the field; Eliminating the ion source as a source of transition metals contamination, by using an external and preferably remote cathode and providing an ionization chamber and extraction aperture fabricated of non-contaminating material, e.g. graphite, silicon carbide or aluminum; Enabling retrofit of the new ion source into the ion source design space of existing Bernas source-based ion implanters and the like or otherwise enabling compatibility with other ion source designs; Using a control system in retrofit installations that enables retention of the installed operator interface and control techniques with which operators are already familiar; Enabling convenient handling and replenishment of the solid within the vaporizer without substantial down-time of the implanter; Providing internal adjustment and control techniques that enable, with a single design, matching the dimensions and intensity of the zone in which ionization occurs to the beam line of the implanter and the requirement of the process at hand; Providing novel approaches, starting materials and conditions of operation that enable the making of future generations of semiconductor devices and especially CMOS source/drains and extensions, and doping of silicon gates.

公开(公告)号：US06573517B1

公开(公告)日：2003-06-03

申请号：US09629622

申请日：2000-07-31

Applicant: Michiro Sugitani ,  Mitsukuni Tsukihara ,  Yoshitomo Hidaka ,  Mitsuaki Kabasawa ,  Kouji Inada

Inventor： Michiro Sugitani ,  Mitsukuni Tsukihara ,  Yoshitomo Hidaka ,  Mitsuaki Kabasawa ,  Kouji Inada

IPC: H01J3708

CPC classification number: G21K1/08 ,  H01J37/147 ,  H01J37/3171 ,  H01J2237/31705

Abstract: An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.

Abstract translation: 离子注入装置具有离子源，质量分析用磁体，加速/减速元件以及偏转元件。 质量分析磁体对从离子源提取的离子束进行质量分析。 加速/去纤维元件在后期加速和减速离子束。 偏转元件布置在质量分析磁体和加速/减速元件之间。 偏转元件的每个方向角被确定为使得在被引入晶片衬底之前的预定区域中的最终光束轨迹在偏转元件的操作模式和非操作模式中彼此匹配。