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    Plain copper foodware and metal articles with durable and tarnish free multiplayer ceramic coating and method of making
    91.
    发明授权
    Plain copper foodware and metal articles with durable and tarnish free multiplayer ceramic coating and method of making 有权
    普通铜食品和金属制品具有耐用且无玷污的多层陶瓷涂层及其制作方法

    公开(公告)号：US08021768B2

    公开(公告)日：2011-09-20

    申请号：US12419552

    申请日：2009-04-07

    Applicant: Molly Mo Hui Ge

    Inventor： Molly Mo Hui Ge

    IPC: B32B9/00

    CPC classification number: A47J36/02 ,  A47J36/025 ,  C23C14/0036 ,  C23C14/025 ,  C23C14/0641 ,  C23C28/321 ,  C23C28/322 ,  C23C28/34 ,  C23C28/42 ,  Y10T428/12771 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/265

    Abstract: Soft and porous material is coated with a multilayer ceramic coating by physical vapor deposition. The coated material is suitable for use as foodware, particularly, a copper foodware article including a plain copper substrate, a base coating, and a ceramic coating. The base coating is deposited by sputtering and cathodic arc in combination, providing the good corrosion resistance and adhesion to the substrate. The ceramic coating includes a PVD nitride or carbonitride layer, providing a tarnish-free surface, good durability, and thermal stability. The coated copper foodware article has the same heat conductivity as pure copper, good corrosion resistance, high durability, excellent cooking, and ease of cleaning. A metal article having a multilayer coating and a method of making a metal article are also described.

    Abstract translation: 软和多孔材料通过物理气相沉积涂覆有多层陶瓷涂层。 涂覆的材料适合用作食品，特别是包括普通铜基底，基底涂层和陶瓷涂层的铜食品制品。 基底涂层通过溅射和阴极电弧组合沉积，提供良好的耐腐蚀性和对基底的粘附。 陶瓷涂层包括PVD氮化物或碳氮化物层，提供无晦暗的表面，良好的耐久性和热稳定性。 涂覆的铜食品具有与纯铜相同的导热性，良好的耐腐蚀性，高耐久性，优良的烹饪和易于清洁的功能。 还描述了具有多层涂层的金属制品和制造金属制品的方法。

    SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN LARGE SCALE PROCESSING OF CIGS AND/OR CIS DEVICES
    93.
    发明申请
    SYSTEM AND METHOD FOR TRANSFERRING SUBSTRATES IN LARGE SCALE PROCESSING OF CIGS AND/OR CIS DEVICES 审中-公开
    用于在CIGS和/或CIS设备的大规模处理中传送基板的系统和方法

    公开(公告)号：US20110018103A1

    公开(公告)日：2011-01-27

    申请号：US12568654

    申请日：2009-09-28

    Applicant: Robert D. Wieting

    Inventor： Robert D. Wieting

    IPC: H01L29/12 ,  H01L21/20

    CPC classification number: H01L21/02568 ,  C03C17/3615 ,  C03C17/3628 ,  C03C17/3631 ,  C03C17/3649 ,  C03C17/3678 ,  C03C2217/944 ,  C23C14/025 ,  C23C14/185 ,  C23C14/5866 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/1876 ,  Y02E10/541 ,  Y02P70/521

    Abstract: According to an embodiment, the present invention provide method for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a copper and indium composite structure, each of the substrate including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening. The method further includes introducing a gaseous species including a hydrogen species and a selenide species and a carrier gas into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature ranging from about 350° C. to about 450° C. to at least initiate formation of a copper indium diselenide film from the copper and indium composite structure on each of the substrates.

    Abstract translation: 根据实施例，本发明提供了制造铜铟二硒化物半导体膜的方法。 所述方法包括提供多个基板，每个基板具有铜和铟复合结构，每个基板包括周边区域，所述周边区域包括多个开口，所述多个开口至少包括第一开口和 第二个开口 还包括将多个基板转移到炉中，多个基板中的每一个相对于重力方向设置在垂直取向上，多个基板由数目N定义，其中N大于5， 包括保持装置的炉，所述保持装置包括第一细长构件，其被配置为使用至少所述第一开口来悬挂每个所述基板。 该方法还包括将包括氢物质和硒化物物质和载气的气体物质引入炉中并将热能传递到炉中以将温度从第一温度升高到第二温度，第二温度范围为约350℃ 从而至少从每个基底上的铜和铟复合结构起始形成铜铟硒化铟膜。

    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    99.
    发明申请
    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR 有权
    耐高温固体压力传感器

    公开(公告)号：US20100155866A1

    公开(公告)日：2010-06-24

    申请号：US12579123

    申请日：2009-10-14

    Applicant: Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    Inventor： Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

    IPC: H01L29/84 ,  H01L21/30

    CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

    Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

    Abstract translation: 一种恶劣环境换能器，包括具有第一表面和第二表面的基底，其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底，使得衬底的第一表面基本上与环境隔离，并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线，使得传感器装置的输出可以被传送。 导线的外表面基本上是铂，并且输出触点和连接部件中的至少一个的外表面基本上是铂。

    Doped Gallium Nitride Annealing
    100.
    发明申请
    Doped Gallium Nitride Annealing 审中-公开
    掺杂氮化镓退火

    公开(公告)号：US20100147835A1

    公开(公告)日：2010-06-17

    申请号：US12463952

    申请日：2009-05-11

    Applicant: Rao V. Mulpuri ,  Yonglai Tian ,  Siddarth G. Sundaresan

    Inventor： Rao V. Mulpuri ,  Yonglai Tian ,  Siddarth G. Sundaresan

    IPC: H05B6/64 ,  B23K26/00

    CPC classification number: H01L21/02631 ,  C23C14/025 ,  C23C14/04 ,  C23C14/0635 ,  C23C14/28 ,  C23C14/541 ,  C30B11/12 ,  C30B23/066 ,  C30B29/36 ,  C30B29/60 ,  H01L21/02491 ,  H01L21/02513 ,  H01L21/02529 ,  H01L21/02603 ,  H01L21/02609 ,  Y10S438/931

    Abstract: The present invention involves annealing methods for doped gallium nitride (GaN). In one embodiment, one method includes placing, within a heating unit, a silicon carbide (SiC) wafer as a susceptor in close proximity with a doped GaN epilayer, wherein the doped GaN epilayer is either a GaN layer grown on a substrate or a GaN layer that is free standing; and heating, at a heating rate of at least about 100° C./s, the wafer and the doped GaN epilayer to at least about 1200° C. In another embodiment, another method includes placing, within a heating unit, a doped GaN epilayer, wherein the doped GaN epilayer is either a GaN layer grown on a conducting substrate or a GaN layer that is free standing; and heating, at a heating rate of at least about 100° C./s, the doped GaN epilayer to at least about 1200° C.

    Abstract translation: 本发明涉及用于掺杂氮化镓（GaN）的退火方法。 在一个实施例中，一种方法包括在加热单元内放置碳化硅（SiC）晶片作为紧邻掺杂的GaN外延层的基座，其中所述掺杂的GaN外延层是在衬底或GaN上生长的GaN层 独立的层; 并且以至少约100℃/ s的加热速率将晶片和掺杂的GaN外延层加热至至少约1200℃。在另一个实施例中，另一种方法包括在加热单元内放置掺杂的GaN 外延层，其中所述掺杂GaN外延层是在导电衬底上生长的GaN层或独立存在的GaN层; 并以至少约100℃/ s的加热速率将掺杂的GaN外延层加热至至少约1200℃

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