摘要:
A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.
摘要:
A system for facilitating 9-1-1 service delivery to internet telephony customers is provided. The system includes a server device for receiving a 9-1-1 call from a user device via a data network, where the 9-1-1 call are based on “9-1-1” digits dialed at the user device. The server device is configured to forward the received 9-1-1 call to an operator services interface operatively connected to the server device.
摘要:
Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film pattern, is formed on a substrate with devices formed thereon, the devices including a photodiode and gate electrodes. Then, a passivation film, a color filter, and a microlens are sequentially formed on the metal wiring. All or a portion of the metal wiring is formed in a transparent conductive film pattern. As such, the metal wiring is formed on the photodiode.
摘要:
Disclosed are a pinned photodiode having and electrically controllable pinning layer and an image sensor including the pinned photodiode. A predetermined voltage is applied to the pinning layer for the depletion duration of the photodiode in the image sensor, so that stable surface pinning is acquired and the uniform surface pinning is achieved between pixels.
摘要:
A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.
摘要:
A circuit includes a luminance average value output unit for extracting luminance values from pixel data of the first and the second frames to generate first luminance average values for pixel lines of the first frame and second luminance average values for pixel lines of the second frame, a flicker curve generating unit for subtracting the second luminance average values from the first luminance average values, thereby generating a flicker curve, and a flicker detecting unit for extracting a plurality of local minimum points from the flicker curve, calculating a distance between each two neighboring local minimum points of the extracted local minimum points, and determining whether the flicker is present based on the distances and the frequency numbers of the distances.
摘要:
An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is fanned in the substrate adjacent to a sidewall of the trench.
摘要:
Methods and apparatus for maintaining the maximum achievable data rate on a DSL line, up to and including a rate to which a user subscribes is described. Performance monitoring is conducted on the DSL line on an ongoing basis to determine noise margins in each direction. Each noise margin is compared against pre-determined decreasing/increasing thresholds to determine whether the line characteristics dictate a data rate change without loss of synchronization. The invention supports dynamic provisioning changes including application driven service level change requests, e.g., new bandwidth-on demand services. In some embodiments, a combination of existing and new embedded operations channel (EOC) messages are used to implement the modem data rate changes. New EOC messages may be implemented using some of the reserved and/or vendor proprietary Opcodes currently permitted. Modem assigned data rate changes are implemented without a disruption of service, e.g., without the need for re-initialization and/or re-synchronization.
摘要:
Disclosed is a CMOS image sensor, which can minimize a reflectance of light at an interface between a photodiode and an insulating film, thereby enhancing image sensitivity. Such a CMOS image sensor includes a substrate provided with a photodiode consisting of Si, an insulating film consisting of SiO2 and formed on the substrate, a semi-reflection film interposed between the substrate and the insulating film, and metal interconnections, color filters and micro lenses constituting individual unit pixels. The semi-reflection film has a refraction index value between those of the Si photodiode and the SiO2 insulating film.
摘要:
A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.