CMOS image sensor having double gate insulator therein and method for manufacturing the same
    91.
    发明授权
    CMOS image sensor having double gate insulator therein and method for manufacturing the same 有权
    具有双栅极绝缘体的CMOS图像传感器及其制造方法

    公开(公告)号:US08629023B2

    公开(公告)日:2014-01-14

    申请号:US13424957

    申请日:2012-03-20

    申请人: Ju-Il Lee

    发明人: Ju-Il Lee

    IPC分类号: H01L21/00

    CPC分类号: H01L27/14689 H01L27/14609

    摘要: A method for manufacturing a CMOS image sensor includes: preparing a semiconductor substrate incorporating therein a p-type epitaxial layer by epitaxially growing up an upper portion of the semiconductor substrate; forming a pixel array in one predetermined location of the semiconductor substrate, the pixel array having a plurality of transistors and a photodiode therein, wherein each transistor employs a gate insulator with a thickness ranging from 40 Å to 90 Å; and forming a logic circuit in the other predetermined location of the semiconductor substrate, the logic circuit having at least one transistor, wherein the transistor employs a gate insulator with a thickness ranging from 5 Å to 40 Å.

    摘要翻译: 一种制造CMOS图像传感器的方法,包括:通过外延生长半导体衬底的上部来制备其中并入有p型外延层的半导体衬底; 在所述半导体衬底的一个预定位置中形成像素阵列,所述像素阵列具有多个晶体管和其中的光电二极管,其中每个晶体管采用厚度范围从-40到90的栅极绝缘体; 以及在所述半导体衬底的另一个预定位置中形成逻辑电路,所述逻辑电路具有至少一个晶体管,其中所述晶体管采用厚度范围为从...的栅极绝缘体。

    Image sensor and method of manufacturing the same
    93.
    发明授权
    Image sensor and method of manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号:US08580598B2

    公开(公告)日:2013-11-12

    申请号:US13495167

    申请日:2012-06-13

    申请人: Hee Jeen Kim

    发明人: Hee Jeen Kim

    IPC分类号: H01L21/00

    摘要: Disclosed are an image sensor and a method of manufacturing the same. A metal wiring consisting of a lower metal wiring, an upper metal wiring, and a plug connecting the lower and upper metal wirings, in which the lower and upper metal wiring are made of a transparent conductive film pattern, is formed on a substrate with devices formed thereon, the devices including a photodiode and gate electrodes. Then, a passivation film, a color filter, and a microlens are sequentially formed on the metal wiring. All or a portion of the metal wiring is formed in a transparent conductive film pattern. As such, the metal wiring is formed on the photodiode.

    摘要翻译: 公开了一种图像传感器及其制造方法。 由下金属布线,上金属布线和连接下金属布线和上金属布线的插头构成的金属布线,其中下金属布线和上金属布线由透明导电膜图案制成,在基板上形成有装置 所述器件包括光电二极管和栅电极。 然后,在金属布线上依次形成钝化膜,滤色器和微透镜。 金属布线的全部或一部分形成为透明导电膜图案。 因此,金属布线形成在光电二极管上。

    Pixel of image sensor having electrically controllable pinning layer
    94.
    发明授权
    Pixel of image sensor having electrically controllable pinning layer 有权
    具有电可控锁定层的图像传感器的像素

    公开(公告)号:US08569672B2

    公开(公告)日:2013-10-29

    申请号:US13055559

    申请日:2009-08-19

    申请人: Man Lyun Ha

    发明人: Man Lyun Ha

    IPC分类号: H01L27/146

    摘要: Disclosed are a pinned photodiode having and electrically controllable pinning layer and an image sensor including the pinned photodiode. A predetermined voltage is applied to the pinning layer for the depletion duration of the photodiode in the image sensor, so that stable surface pinning is acquired and the uniform surface pinning is achieved between pixels.

    摘要翻译: 公开了一种具有电可控钉扎层的钉扎光电二极管和包括钉扎光电二极管的图像传感器。 为了图像传感器中的光电二极管的耗尽时间,将预定电压施加到钉扎层,从而获得稳定的表面钉扎,并且在像素之间实现均匀的表面钉扎。

    IMAGE PIXEL EMPLOYING FLOATING BASE READOUT CONCEPT, AND IMAGE SENSOR AND IMAGE SENSOR ARRAY INCLUDING THE IMAGE PIXEL
    95.
    发明申请
    IMAGE PIXEL EMPLOYING FLOATING BASE READOUT CONCEPT, AND IMAGE SENSOR AND IMAGE SENSOR ARRAY INCLUDING THE IMAGE PIXEL 有权
    图像像素使用浮动基本读数概念,图像传感器和图像传感器阵列,包括图像像素

    公开(公告)号:US20130234784A1

    公开(公告)日:2013-09-12

    申请号:US13748744

    申请日:2013-01-24

    发明人: Jaroslav Hynecek

    IPC分类号: H01L27/146 H03K17/20

    摘要: A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.

    摘要翻译: 图像传感器的像素仅包括每像素两条信号线,用于感测光的钉扎光电二极管,浮动基极双极晶体管,以及无复位和地址晶体管。 浮置基极双极晶体管为像素提供增益,可以增加像素灵敏度并降低噪声。 该像素还包括用于高效起霜抑制的垂直起霜控制结构。 像素的输出端子耦合到由用于减少发射极漏电流的特殊电流感测相关双采样电路端接的公共列输出线。 基于这种结构,像素具有高灵敏度,高响应均匀性,低噪声,尺寸减小和布局有效。

    Flicker detecting circuit and method in image sensor
    96.
    发明授权
    Flicker detecting circuit and method in image sensor 有权
    图像传感器中的闪烁检测电路和方法

    公开(公告)号:US08520094B2

    公开(公告)日:2013-08-27

    申请号:US13159505

    申请日:2011-06-14

    IPC分类号: H04N9/73

    CPC分类号: H04N5/235 H04N5/2357

    摘要: A circuit includes a luminance average value output unit for extracting luminance values from pixel data of the first and the second frames to generate first luminance average values for pixel lines of the first frame and second luminance average values for pixel lines of the second frame, a flicker curve generating unit for subtracting the second luminance average values from the first luminance average values, thereby generating a flicker curve, and a flicker detecting unit for extracting a plurality of local minimum points from the flicker curve, calculating a distance between each two neighboring local minimum points of the extracted local minimum points, and determining whether the flicker is present based on the distances and the frequency numbers of the distances.

    摘要翻译: 一种电路包括:亮度平均值输出单元,用于从第一和第二帧的像素数据中提取亮度值,以生成第一帧的像素线的第一亮度平均值和第二帧的像素线的第二亮度平均值; 闪烁曲线生成单元,用于从第一亮度平均值中减去第二亮度平均值,从而产生闪烁曲线;以及闪烁检测单元,用于从闪烁曲线中提取多个局部最小点,计算每个两个相邻局部 提取的局部最小点的最小点,并且基于距离和距离的频率数确定闪烁是否存在。

    Image sensor and method for fabricating the same

    公开(公告)号:US08476685B2

    公开(公告)日:2013-07-02

    申请号:US13023754

    申请日:2011-02-09

    申请人: Kwang-Ho Lee

    发明人: Kwang-Ho Lee

    IPC分类号: H01L27/108

    摘要: An image sensor includes a trench formed by a shallow trench isolation (STI) process, a channel stop layer formed over a substrate in the trench, an isolation structure filled in the trench, and a photodiode formed in the substrate adjacent to a sidewall of the trench. In more detail of the image sensor, a trench is formed in a substrate through a STI process, and a channel stop layer is formed over the substrate in the trench. An isolation structure is formed in the trench, and a photodiode is fanned in the substrate adjacent to a sidewall of the trench.

    Rate agile rate-adaptive digital subscriber line

    公开(公告)号:US08457181B2

    公开(公告)日:2013-06-04

    申请号:US11961018

    申请日:2007-12-20

    IPC分类号: H04B1/38

    摘要: Methods and apparatus for maintaining the maximum achievable data rate on a DSL line, up to and including a rate to which a user subscribes is described. Performance monitoring is conducted on the DSL line on an ongoing basis to determine noise margins in each direction. Each noise margin is compared against pre-determined decreasing/increasing thresholds to determine whether the line characteristics dictate a data rate change without loss of synchronization. The invention supports dynamic provisioning changes including application driven service level change requests, e.g., new bandwidth-on demand services. In some embodiments, a combination of existing and new embedded operations channel (EOC) messages are used to implement the modem data rate changes. New EOC messages may be implemented using some of the reserved and/or vendor proprietary Opcodes currently permitted. Modem assigned data rate changes are implemented without a disruption of service, e.g., without the need for re-initialization and/or re-synchronization.

    CMOS image sensor
    99.
    发明授权
    CMOS image sensor 有权
    CMOS图像传感器

    公开(公告)号:US08410528B2

    公开(公告)日:2013-04-02

    申请号:US12756779

    申请日:2010-04-08

    申请人: Woo Sig Min

    发明人: Woo Sig Min

    IPC分类号: H01L31/0232

    摘要: Disclosed is a CMOS image sensor, which can minimize a reflectance of light at an interface between a photodiode and an insulating film, thereby enhancing image sensitivity. Such a CMOS image sensor includes a substrate provided with a photodiode consisting of Si, an insulating film consisting of SiO2 and formed on the substrate, a semi-reflection film interposed between the substrate and the insulating film, and metal interconnections, color filters and micro lenses constituting individual unit pixels. The semi-reflection film has a refraction index value between those of the Si photodiode and the SiO2 insulating film.

    摘要翻译: 公开了一种CMOS图像传感器,其可以使光二极管和绝缘膜之间的界面处的光的反射率最小化,从而增强图像敏感度。 这种CMOS图像传感器包括:具有由Si构成的光电二极管的基板,由SiO 2构成的绝缘膜,形成在基板上,设置在基板和绝缘膜之间的半反射膜,金属互连,滤色器和微型 构成单个单位像素的透镜。 半反射膜具有Si光电二极管和SiO 2绝缘膜之间的折射率值。

    Image pixel employing floating base readout concept, and image sensor and image sensor array including the image pixel
    100.
    发明授权
    Image pixel employing floating base readout concept, and image sensor and image sensor array including the image pixel 有权
    使用浮动基本读出概念的图像像素,以及包括图像像素的图像传感器和图像传感器阵列

    公开(公告)号:US08373781B2

    公开(公告)日:2013-02-12

    申请号:US12003316

    申请日:2007-12-21

    申请人: Jaroslav Hynecek

    发明人: Jaroslav Hynecek

    IPC分类号: H04N3/14

    摘要: A pixel of an image sensor includes only two signal lines per pixel, a pinned photodiode for sensing light, a floating base bipolar transistor, and no reset and address transistors. The floating base bipolar transistor provides the pixel with a gain, which can increase pixel sensitivity and reduce noise. The pixel also incorporates a vertical blooming control structure for an efficient blooming suppression. The output terminals of the pixel are coupled to a common column output line terminated by a special current sensing correlated double sampling circuit, which is used for subtraction of emitter leakage current. Based on this structure, the pixel has high sensitivity, high response uniformity, low noise, reduced size, and efficient layout.

    摘要翻译: 图像传感器的像素仅包括每像素两条信号线,用于感测光的钉扎光电二极管,浮动基极双极晶体管,以及无复位和地址晶体管。 浮置基极双极晶体管为像素提供增益,可以增加像素灵敏度并降低噪声。 该像素还包括用于高效起霜抑制的垂直起霜控制结构。 像素的输出端子耦合到由用于减少发射极漏电流的特殊电流感测相关双采样电路端接的公共列输出线。 基于这种结构,像素具有高灵敏度,高响应均匀性,低噪声,尺寸减小和布局有效。