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    CMOS and HCMOS semiconductor integrated circuit
    91.
    发明授权
    CMOS and HCMOS semiconductor integrated circuit 失效
    CMOS和HCMOS半导体集成电路

    公开(公告)号：US07564073B2

    公开(公告)日：2009-07-21

    申请号：US11294566

    申请日：2005-12-06

    Applicant: Haruyuki Sorada ,  Akira Asai ,  Takeshi Takagi ,  Akira Inoue ,  Yoshio Kawashima

    Inventor： Haruyuki Sorada ,  Akira Asai ,  Takeshi Takagi ,  Akira Inoue ,  Yoshio Kawashima

    IPC: H01L27/04

    CPC classification number: H01L21/823807

    Abstract: A semiconductor integrated circuit fabrication method according to this invention includes: a step of forming a pair of first device forming regions and a pair of second device forming regions in a surface layer portion of a semiconductor substrate by surrounding each of the regions by device isolation; a step of forming a first oxide film covering the surface of the semiconductor substrate after the preceding step; a step of removing an intended portion of the first oxide film to expose the pair of second device forming regions; a step of forming a pair of heterojunction structures, by selective epitaxial growth, on the pair of second device forming regions thus exposed; a step of forming a second oxide film covering the surface of the substrate after the preceding step; and a step of forming a pair of gate electrodes above each of the pair of first device forming regions and the pair of second device forming regions, whereby a normal complementary MOS transistor and a heterojunction complementary MOS transistor are eventually formed in the pair of first device forming regions and the pair of second device forming regions, respectively.

    Abstract translation: 根据本发明的半导体集成电路制造方法包括：通过器件隔离来围绕每个区域来在半导体衬底的表面层部分中形成一对第一器件形成区域和一对第二器件形成区域的步骤; 在前述步骤之后形成覆盖半导体衬底的表面的第一氧化物膜的步骤; 去除所述第一氧化物膜的预期部分以暴露所述一对第二器件形成区域的步骤; 通过选择性外延生长形成一对异质结结构在由此露出的一对第二器件形成区上的步骤; 在上述步骤之后形成覆盖基板表面的第二氧化膜的步骤; 以及在所述一对第一器件形成区域和所述一对第二器件形成区域中的每一个上形成一对栅电极的步骤，由此在所述一对第一器件形成区域中最终形成正常互补MOS晶体管和异质结互补MOS晶体管 形成区域和一对第二装置形成区域。

    Color filter and method for manufacturing the same
    92.
    发明授权
    Color filter and method for manufacturing the same 有权
    滤色器及其制造方法

    公开(公告)号：US07538837B2

    公开(公告)日：2009-05-26

    申请号：US11148916

    申请日：2005-06-09

    Applicant: Shinsuke Nakazawa ,  Akira Inoue ,  Shunsuke Sega

    Inventor： Shinsuke Nakazawa ,  Akira Inoue ,  Shunsuke Sega

    IPC: G02F1/1335 ,  G02F1/13

    CPC classification number: G02F1/133514 ,  G02F1/133516

    Abstract: A color filter having no light leakage when incorporated into a liquid crystal display, and also, those in which pseudo-defects are scarcely detected in the color filter defect inspection is provided. Also provided is a method for manufacturing the same. The color filter includes a transparent substrate; a light shielding part, formed on the transparent substrate, containing at least a light shielding material and a resin; and a pixel part formed on an opening of the light shielding part on the transparent substrate.

    Abstract translation: 提供了当结合到液晶显示器中时没有漏光的滤色器，以及在滤色器缺陷检查中几乎没有检测到伪缺陷的滤色器。 还提供了制造该方法的方法。 滤色器包括透明基板; 遮光部，形成在所述透明基板上，至少含有遮光材料和树脂; 以及形成在透明基板上的遮光部的开口部上的像素部。

    Compressor
    93.
    发明申请
    Compressor 有权
    压缩机

    公开(公告)号：US20090104050A1

    公开(公告)日：2009-04-23

    申请号：US10576480

    申请日：2005-11-21

    Applicant: Akira Inoue ,  Seigo Yanase ,  Kiwamu Watanabe ,  Hidenori Kobayashi

    Inventor： Akira Inoue ,  Seigo Yanase ,  Kiwamu Watanabe ,  Hidenori Kobayashi

    IPC: F04B53/00

    CPC classification number: F04B39/0061 ,  Y10S181/403

    Abstract: A suction muffler receives low-temperature refrigerant gas discharged into a hermetic container from a suction pipe by a gas catcher, and feeds the gas to a compressor. The lower end of an opening of the gas catcher is located at a position lower than the lower end of an orifice of the suction pipe so as to catch the refrigerant gas falling obliquely downward inside the hermetic container.

    Abstract translation: 吸气消声器通过气体捕集器从吸入管接收从密封容器排出的低温制冷剂气体，并将气体供给压缩机。 气体捕集器的开口的下端位于比吸入管的孔口的下端低的位置，以便捕获在密封容器内倾斜向下落下的制冷剂气体。

    Method of preparing a pigment composition
    94.
    发明授权
    Method of preparing a pigment composition 有权
    颜料组合物的制备方法

    公开(公告)号：US07494542B2

    公开(公告)日：2009-02-24

    申请号：US11802651

    申请日：2007-05-24

    Applicant: Atsushi Endo ,  Takeshi Sato ,  Akira Inoue

    Inventor： Atsushi Endo ,  Takeshi Sato ,  Akira Inoue

    IPC: C09B67/04 ,  C09B67/00 ,  C09B67/20 ,  G02B5/00

    CPC classification number: C09B29/334 ,  C09B67/002 ,  C09B67/0022

    Abstract: A pigment composition can be prepared by wet or dry milling a pigment selected from the group consisting of dianthraquinone pigments, diketopyrrolopyrrole pigments and a mixture thereof, in the presence of a compound represented by Formula 1: where Q denotes —NH(CH2)nNR1(R2) group or hydroxyl group, and R denotes —NH(CH2)nNR1(R2) group.

    Abstract translation: 颜料组合物可以通过在由式1表示的化合物的存在下，通过湿式或干式研磨选自二蒽醌颜料，二酮吡咯并吡咯颜料及其混合物的颜料来制备：其中Q表示-NH（CH 2）n NR1（ R2）基团或羟基，R表示-NH（CH2）nNR1（R2）基团。

    Machine tool
    96.
    发明申请
    Machine tool 失效
    机床

    公开(公告)号：US20080096746A1

    公开(公告)日：2008-04-24

    申请号：US11897398

    申请日：2007-08-30

    Applicant: Miki Ryuhan ,  Koji Kashu ,  Akira Inoue

    Inventor： Miki Ryuhan ,  Koji Kashu ,  Akira Inoue

    IPC: B23Q3/157

    CPC classification number: B23Q1/012 ,  Y10T29/49996 ,  Y10T29/5107 ,  Y10T409/307728 ,  Y10T409/308288 ,  Y10T483/1733

    Abstract: A machine tool includes a table, a main spindle unit, a cross rail, a plurality of columns and a plurality of supportive transfer mechanisms. The plurality of columns vertically guide the cross rail, the columns being erected at positions on opposite sides of the table and on front and rear sides of the center of gravity of the main spindle unit on each side of the table. The supportive transfer mechanisms vertically move the cross rail while supporting the cross rail. The cross rail has a pair of supporting portions for supporting front and rear portions of the main spindle unit located frontward and rearward with respect to the center of gravity of the main spindle unit, respectively, and a plurality of through holes through which the columns are passed vertically.

    Abstract translation: 一种机床包括台，主轴单元，十字轨，多列和多个支撑传送机构。 多个列垂直地引导十字轨道，该列竖立在桌子的相对侧上的位置，并且在桌子的每一侧上的主轴单元的重心的前侧和后侧。 支撑传送机构在支撑横梁时垂直移动横梁。 所述十字轨道具有一对支撑部，用于分别相对于所述主轴单元的重心分别支撑所述主轴单元的前部和后部;以及多个通孔，通过所述多个通孔， 垂直通过

    Method of differentiation induction to osteoblasts
    97.
    发明申请
    Method of differentiation induction to osteoblasts 有权
    分化诱导成骨细胞的方法

    公开(公告)号：US20080057580A1

    公开(公告)日：2008-03-06

    申请号：US11892061

    申请日：2007-08-20

    Applicant: Akira Inoue ,  Hitoshi Hatayama ,  Hiroshi Suganuma ,  Kunio Awazu ,  Toshihiro Kushibiki

    Inventor： Akira Inoue ,  Hitoshi Hatayama ,  Hiroshi Suganuma ,  Kunio Awazu ,  Toshihiro Kushibiki

    IPC: C12N5/02

    CPC classification number: C12N5/0654 ,  C12N2506/1353 ,  C12N2529/10

    Abstract: The invention offers a technique that selectively differentiation-induces mesenchymal stem cells, which can differentiate to cells that constitute various tissues and organs, to osteoblasts. In addition, the invention offers a technique that differentiation-induces mesenchymal stem cells to osteoblasts with a simple operation that needs only short time and that is noninvasive. The inventors have found that the switch for the differentiation induction to osteoblasts is turned on by translocating biological clock-relevant factors existing in mesenchymal stem cells from the cells' cytoplasm to the cells' nucleus. The inventors have also found that the switch can be turned on by irradiating the cells for a short time with a lightwave having a specific wavelength that is noninvasive.

    Abstract translation: 本发明提供了一种选择性分化诱导可以分化成构成各种组织和器官的细胞的成骨细胞的间充质干细胞的技术。 此外，本发明提供了一种技术，其通过简单的操作将间充质干细胞诱导成成骨细胞，其仅需要短时间并且是非侵入性的。 发明人已经发现通过将存在于间充质干细胞中的生物钟相关因子从细胞质细胞转移到细胞核来开启分化诱导成骨细胞的转换。 本发明人还发现，可以通过用具有特定波长的非侵入性的光波照射细胞短时间来开启开关。

    High-frequency semiconductor device
    100.
    发明申请
    High-frequency semiconductor device 审中-公开
    高频半导体器件

    公开(公告)号：US20070145415A1

    公开(公告)日：2007-06-28

    申请号：US11484624

    申请日：2006-07-12

    Applicant: Akira Inoue ,  Hirotaka Amasuga ,  Tetsuo Kunii

    Inventor： Akira Inoue ,  Hirotaka Amasuga ,  Tetsuo Kunii

    IPC: H01L29/76

    CPC classification number: H01L29/7785 ,  H01L29/0692 ,  H01L29/42316

    Abstract: A semiconductor device operating at a frequency between 0.8 GHz and 300 GHz includes an active region that is positioned on a semi-insulating GaAs substrate; a gate electrode that is positioned in the active region; and a source electrode and a drain electrode that are positioned on the surface of the active region facing each other with the gate electrode positioned between the source electrode and the drain electrode. A drain side active region, which is a part of the active region and positioned between the gate electrode and the drain electrode, increases in width in the direction to the drain electrode from the gate electrode.

    Abstract translation: 以0.8GHz和300GHz之间的频率工作的半导体器件包括位于半绝缘GaAs衬底上的有源区; 位于有源区中的栅电极; 以及源电极和漏电极，其位于有源区的表面上，栅电极位于源电极和漏电极之间。 作为有源区的一部分并且位于栅电极和漏电极之间的漏极侧有源区在从栅电极到漏电极的方向上的宽度增加。

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