公开(公告)号：US20050007830A1

公开(公告)日：2005-01-13

申请号：US10765483

申请日：2004-01-27

申请人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

发明人： Frederick Perner ,  Kenneth Smith ,  Corbin Champion

IPC分类号： G11C11/15 ,  G11C7/06 ,  G11C11/14 ,  G11C5/00

CPC分类号： G11C11/14 ,  G11C11/15 ,  G11C11/16

摘要： A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled to a second MRAM cell. The method includes providing a voltage to a first end of the first memory cell string that is closest to the first MRAM cell, providing a ground source to a second end of the first memory cell string that is opposite the first end, and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current to the first MRAM cell.

摘要翻译： 一种从包括耦合到第二MRAM单元的第一MRAM单元的存储单元串中的第一磁随机存取存储器（MRAM）单元执行读操作的方法。 该方法包括向最接近第一MRAM单元的第一存储单元串提供电压，向第一存储单元串提供与第一端相对的第二端的接地源，以及确定是否 响应于向第一MRAM单元施加写检测电流，在第一和第二MRAM单元之间的节点处发生电压变化。

公开(公告)号：US06826094B1

公开(公告)日：2004-11-30

申请号：US10452755

申请日：2003-06-02

申请人： Frederick Perner ,  Kenneth Smith

发明人： Frederick Perner ,  Kenneth Smith

IPC分类号： G11C1124

CPC分类号： G11C11/16

摘要： A magnetic memory includes a sense amplifier coupled to a memory cell. The sense amplifier includes a capacitor operative between a first voltage established by a first sense current flowing in a first direction and corresponding to an unknown logic state of the memory cell, and a second voltage established by a second sense current flowing in a second direction and corresponding to a known logic state of the memory cell. The sense amplifier includes detect logic configured to compare the second voltage to an upper and lower threshold voltage and provide the known logic state if the second voltage is less than the upper threshold voltage and greater than the lower threshold voltage, and provide a logic state opposite to the known logic state if the second voltage is equal to or greater than the upper threshold voltage or is equal to or less than the lower threshold voltage.

摘要翻译： 磁存储器包括耦合到存储单元的读出放大器。 读出放大器包括在由在第一方向上流动的第一感测电流建立的第一电压和对应于存储器单元的未知逻辑状态的第一电压之间运行的电容器和由在第二方向上流动的第二感测电流建立的第二电压， 对应于存储器单元的已知逻辑状态。 读出放大器包括被配置为将第二电压与上阈值电压和下阈值电压进行比较的检测逻辑，并且如果第二电压小于上阈值电压且大于下阈值电压，则提供已知逻辑状态，并提供相反的逻辑状态 如果第二电压等于或大于上阈值电压或等于或小于下阈值电压，则到已知的逻辑状态。