公开(公告)号：US20160148776A1

公开(公告)日：2016-05-26

申请号：US14943996

申请日：2015-11-17

Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

Inventor： Jin Woo JEONG ,  Yoon Ho SONG ,  Jun Tae KANG ,  Jae Woo KIM

IPC: H01J29/48 ,  H01J19/38 ,  H01J19/82 ,  H01J19/24

CPC classification number: H01J35/045 ,  H01J3/021 ,  H01J29/462 ,  H01J35/065 ,  H01J2203/0292

Abstract: Provided herein is a field emission device. The field emission device includes a cathode which is connected to a negative power supply and emits electrons, an anode which is connected to a positive power supply and includes a target material receiving the electrons emitted from the cathode, and a ground electrode which is formed to face the anode and has an opening through which the electrons emitted from the cathode pass. The ground electrode is grounded so that when an arc discharge occurs due to high voltage operation of the anode, electric charge produced by the arc discharge is emitted to a ground.

Abstract translation: 本文提供的是场致发射装置。 场致发射器件包括连接到负电源并发射电子的阴极，连接到正电源并包括接收从阴极发射的电子的靶材料的阳极和形成为 面对阳极并且具有从阴极发射的电子通过的开口。 接地电极接地，当由于阳极的高压运行而发生电弧放电时，由电弧放电产生的电荷被发射到地面。

公开(公告)号：US07417380B2

公开(公告)日：2008-08-26

申请号：US11351473

申请日：2006-02-09

Applicant: Seung-Hyun Lee ,  Cheol-Hyeon Chang

Inventor： Seung-Hyun Lee ,  Cheol-Hyeon Chang

IPC: G09G3/10

CPC classification number: H01J29/481 ,  H01J29/864 ,  H01J31/127 ,  H01J2203/0292 ,  H01J2329/4695 ,  H01J2329/8625

Abstract: An electron emission device has an optimized inner structure where the electrons emitted from the electron emission regions are straightly migrated toward the phosphor layers. The electron emission device includes first and second substrates facing each other, and cathode electrodes formed on the first substrate. Electron emission regions are formed on the cathode electrodes. An insulating layer and gate electrodes are formed on the cathode electrodes and have openings exposing the electron emission regions. Phosphor layers are formed on the second substrate. An anode electrode is formed on a surface of the phosphor layers. The distance z between the cathode and the anode electrodes satisfies the following condition: 0.7d((Va−Vc)/Vg)≦z≦1.4d((Va−Vc)/Vg), where Vc indicates the voltage applied to the cathode electrodes, Vg the voltage applied to the gate electrodes, Va the voltage applied to the anode electrode, and d the distance between the cathode and the gate electrodes.

Abstract translation: 电子发射器件具有优化的内部结构，其中从电子发射区发射的电子直接向荧光层迁移。 电子发射器件包括彼此面对的第一和第二衬底，以及形成在第一衬底上的阴极电极。 电子发射区形成在阴极上。 在阴极电极上形成绝缘层和栅电极，并具有露出电子发射区的开口。 在第二基板上形成荧光体层。 在荧光体层的表面上形成阳极电极。 阴极和阳极之间的距离z满足以下条件：<？in-line-formula description =“In-line formula”end =“lead”>> 0.7d（（Va-Vc）/ Vg） z <= 1.4d（（Va-Vc）/ Vg），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Vc表示施加到阴极电极的电压，Vg 施加到栅电极的电压，Va施加到阳极电极，d d是阴极和栅电极之间的距离。

公开(公告)号：US20070029919A1

公开(公告)日：2007-02-08

申请号：US11472110

申请日：2006-06-20

Applicant: Sang Lee

Inventor： Sang Lee

IPC: H01J63/04 ,  H01J1/62

CPC classification number: H01J29/481 ,  H01J29/467 ,  H01J2203/024 ,  H01J2203/0244 ,  H01J2203/0292 ,  H01J2329/00

Abstract: An electron emission device includes a cathode electrode formed by depositing a conductive substance on a substrate; a first insulating layer formed to expose a portion of the cathode electrode by applying an insulating substance on the cathode electrode; a gate electrode formed by depositing a metal substance on the first insulating layer; a second insulating layer formed of an insulating substance on the gate electrode; a first focus electrode formed of a metal substance on the second insulating layer; a third insulating layer formed of an insulating substance on a region of the first focus electrode; a second focus electrode formed of a metal substance on the third insulating layer; and an electron emitter formed in a region on which the portion of the cathode electrode is exposed.

Abstract translation: 电子发射装置包括通过在基板上沉积导电物质形成的阴极电极; 第一绝缘层，其通过在所述阴极上施加绝缘物质而形成为暴露所述阴极电极的一部分; 通过在第一绝缘层上沉积金属物质形成的栅电极; 在栅电极上由绝缘物质形成的第二绝缘层; 在所述第二绝缘层上由金属物质形成的第一聚焦电极; 在所述第一聚焦电极的区域上由绝缘物质形成的第三绝缘层; 在所述第三绝缘层上由金属物质形成的第二聚焦电极; 以及形成在阴极部分露出的区域中的电子发射体。

公开(公告)号：US20060220584A1

公开(公告)日：2006-10-05

申请号：US11351473

申请日：2006-02-09

Applicant: Seung-Hyun Lee ,  Cheol-Hyeon Chang

Inventor： Seung-Hyun Lee ,  Cheol-Hyeon Chang

IPC: G09G3/10

CPC classification number: H01J29/481 ,  H01J29/864 ,  H01J31/127 ,  H01J2203/0292 ,  H01J2329/4695 ,  H01J2329/8625

Abstract: An electron emission device has an optimized inner structure where the electrons emitted from the electron emission regions are straightly migrated toward the phosphor layers. The electron emission device includes first and second substrates facing each other, and cathode electrodes formed on the first substrate. Electron emission regions are formed on the cathode electrodes. An insulating layer and gate electrodes are formed on the cathode electrodes and have openings exposing the electron emission regions. Phosphor layers are formed on the second substrate. An anode electrode is formed on a surface of the phosphor layers. The distance z between the cathode and the anode electrodes satisfies the following condition: 0.7d((Va−Vc)/Vg)≦z≦1.4d((Va−Vc)/Vg),where Vc indicates the voltage applied to the cathode electrodes, Vg the voltage applied to the gate electrodes, Va the voltage applied to the anode electrode, and d the distance between the cathode and the gate electrodes.

Abstract translation: 电子发射器件具有优化的内部结构，其中从电子发射区发射的电子直接向荧光层迁移。 电子发射器件包括彼此面对的第一和第二衬底，以及形成在第一衬底上的阴极。 电子发射区形成在阴极上。 在阴极电极上形成绝缘层和栅电极，并具有露出电子发射区的开口。 在第二基板上形成荧光体层。 在荧光体层的表面上形成阳极电极。 阴极和阳极之间的距离z满足以下条件：<？in-line-formula description =“In-line formula”end =“lead”>> 0.7d（（Va-Vc）/ Vg） z <= 1.4d（（Va-Vc）/ Vg），<？in-line-formula description =“In-line Formulas”end =“tail”？>其中Vc表示施加到阴极电极的电压，Vg 施加到栅电极的电压，Va施加到阳极电极，d d是阴极和栅电极之间的距离。

公开(公告)号：US06741039B2

公开(公告)日：2004-05-25

申请号：US10145723

申请日：2002-05-16

Applicant: Chun-Tao Lee ,  Cheng-Chung Lee ,  Jyh-Rong Sheu ,  Yu-Yang Chang

Inventor： Chun-Tao Lee ,  Cheng-Chung Lee ,  Jyh-Rong Sheu ,  Yu-Yang Chang

IPC: G09G310

CPC classification number: G09G3/22 ,  H01J31/127 ,  H01J2203/0292 ,  H01J2329/4695

Abstract: An improved FED driving method, which uses a voltage control different from the prior FED, to turn an electron beam on/off and increase the resolution. The improved FED driving method is characterized in increasing a positive voltage applied to the FED's anode, grounding the FED's emitter and applying a negative voltage to the FED's gate. When driving the FED, the anode can pull electron beam out of the cathode with high accelerate voltage and the applied negative voltage on the gate can turn the electron beam on/off. As such, this allows a higher resolution because the electron beam is not influenced by the gate's lateral attraction and high lighting efficiency with high anode accelerate voltage.

Abstract translation: 使用与先前的FED不同的电压控制的改进的FED驱动方法来打开/关闭电子束并提高分辨率。 改进的FED驱动方法的特征在于增加施加到FED阳极的正电压，将FED的发射极接地并向FED的门施加负电压。 当驱动FED时，阳极可以以高加速电压将电子束拉出阴极，并且栅极上施加的负电压可以打开/关闭电子束。 因此，这允许更高的分辨率，因为电子束不受栅极的横向吸引和高阳极加速电压的高照明效率的影响。

公开(公告)号：US20030122118A1

公开(公告)日：2003-07-03

申请号：US10145723

申请日：2002-05-16

Inventor： Chun-Tao Lee ,  Cheng-Chung Lee ,  Jyh-Rong Sheu ,  Yu-Yang Chang

IPC: H01L029/06 ,  H01J009/12 ,  G09G003/10

CPC classification number: G09G3/22 ,  H01J31/127 ,  H01J2203/0292 ,  H01J2329/4695

Abstract: An improved FED driving method, which uses a voltage control different from the prior FED, to turn an electron beam on/off and increase the resolution. The improved FED driving method is characterized in increasing a positive voltage applied to the FED's anode, grounding the FED's emitter and applying a negative voltage to the FED's gate. When driving the FED, the anode can pull electron beam out of the cathode with high accelerate voltage and the applied negative voltage on the gate can turn the electron beam on/off. As such, this allows a higher resolution because the electron beam is not influenced by the gate's lateral attraction and high lighting efficiency with high anode accelerate voltage.

Abstract translation: 使用与先前的FED不同的电压控制的改进的FED驱动方法来打开/关闭电子束并提高分辨率。 改进的FED驱动方法的特征在于增加施加到FED阳极的正电压，将FED的发射极接地并向FED的门施加负电压。 当驱动FED时，阳极可以以高加速电压将电子束拉出阴极，并且栅极上施加的负电压可以打开/关闭电子束。 因此，这允许更高的分辨率，因为电子束不受栅极的横向吸引和高阳极加速电压的高照明效率的影响。