公开(公告)号：US10679851B2

公开(公告)日：2020-06-09

申请号：US16214172

申请日：2018-12-10

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Peng He ,  Hongping Yu

IPC: H01L21/84 ,  H01L21/02 ,  H01L21/285 ,  H01L21/311 ,  H01L29/66 ,  H01L29/786

Abstract: The present disclosure provides a poly-silicon thin film and a preparation method of a thin film transistor, the method including: providing a substrate, and forming an amorphous silicon thin film on the substrate; placing the amorphous silicon thin film in air for oxidization so as to form an oxide film on the amorphous silicon thin film; etching the oxide film with hydrofluoric acid, and reserving part of the oxide film after etching; and carrying out excimer laser treatment on the amorphous silicon thin film to form a poly-silicon thin film.

公开(公告)号：US20200035490A1

公开(公告)日：2020-01-30

申请号：US16214172

申请日：2018-12-10

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Peng He ,  Hongping Yu

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66 ,  H01L29/786 ,  H01L21/285

Abstract: The present disclosure provides a poly-silicon thin film and a preparation method of a thin film transistor, the method including: providing a substrate, and forming an amorphous silicon thin film on the substrate; placing the amorphous silicon thin film in air for oxidization so as to form an oxide film on the amorphous silicon thin film; etching the oxide film with hydrofluoric acid, and reserving part of the oxide film after etching; and carrying out excimer laser treatment on the amorphous silicon thin film to form a poly-silicon thin film.