公开(公告)号：US20220392768A1

公开(公告)日：2022-12-08

申请号：US17341183

申请日：2021-06-07

Applicant: United Microelectronics Corp.

Inventor： Yi Jing Wang ,  Chia-Chang Hsu ,  Chien-Hao Chen ,  Chang-Mao Wang ,  Chun-Chi Yu

IPC: H01L21/033 ,  H01L21/311 ,  H01L23/544 ,  H01L21/66 ,  G03F7/20

Abstract: The embodiments of the disclosure provide a patterning method, which includes the following processes. A target layer is formed on a substrate. A hard mask layer is formed over the target layer. A first patterning process is performed on the hard mask layer by using a photomask having a first pattern with a first pitch. The photomask is shifted along a first direction by a first distance. A second patterning process is performed on the hard mask layer by using the photomask that has been shifted, so as to form a patterned hard mask. The target layer is patterned using the patterned hard mask to form a patterned target layer. The target layer has a second pattern with a second pitch less than the first pitch.

公开(公告)号：US12106962B2

公开(公告)日：2024-10-01

申请号：US17341183

申请日：2021-06-07

Applicant: United Microelectronics Corp.

Inventor： Yi Jing Wang ,  Chia-Chang Hsu ,  Chien-Hao Chen ,  Chang-Mao Wang ,  Chun-Chi Yu

IPC: H01L21/033 ,  G03F7/00 ,  G03F7/20 ,  H01L21/311 ,  H01L21/66 ,  H01L23/544

CPC classification number: H01L21/0337 ,  G03F7/2022 ,  G03F7/70633 ,  H01L21/31144 ,  H01L22/20 ,  H01L23/544

Abstract: The embodiments of the disclosure provide a patterning method, which includes the following processes. A target layer is formed on a substrate. A hard mask layer is formed over the target layer. A first patterning process is performed on the hard mask layer by using a photomask having a first pattern with a first pitch. The photomask is shifted along a first direction by a first distance. A second patterning process is performed on the hard mask layer by using the photomask that has been shifted, so as to form a patterned hard mask. The target layer is patterned using the patterned hard mask to form a patterned target layer. The target layer has a second pattern with a second pitch less than the first pitch.