公开(公告)号：US20170345774A1

公开(公告)日：2017-11-30

申请号：US15657438

申请日：2017-07-24

Applicant: Texas Instruments Incorporated

Inventor： Ricky Alan JACKSON ,  Sudtida LAVANGKUL ,  Erika Lynn MAZOTTI

IPC: H01L23/00 ,  H01L23/31 ,  H01L21/78 ,  H01L23/528 ,  H01L23/532 ,  H01L23/544

CPC classification number: H01L23/562 ,  H01L23/3171 ,  H01L23/528 ,  H01L23/53261 ,  H01L23/53266 ,  H01L23/585

Abstract: Disclosed embodiments include an integrated circuit having a semiconductor substrate with insulator layers and conductor layers overlying the semiconductor substrate. A scribe region overlying the semiconductor substrate and a periphery of the integrated circuit includes a crack arrest structure and a scribe seal. The crack arrest structure provides first vertical conductor structure that surrounds the periphery of the integrated circuit. The scribe seal is spaced from and surrounded by the crack arrest structure and provides a second vertical conductor structure. The scribe seal includes first and second vias spaced from each other and connected to one of the conductor layers. The first via is a trench via and the second via is a stitch via, with the second via being located closer to the crack arrest structure than the first via.

公开(公告)号：US20190025086A1

公开(公告)日：2019-01-24

申请号：US15656749

申请日：2017-07-21

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Dok Won LEE ,  Erika Lynn MAZOTTI ,  William David FRENCH

IPC: G01D5/16

CPC classification number: G01D5/16 ,  G01D5/145 ,  G01R33/09 ,  G01R33/096

Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor. The sensor comprises a first Wheatstone bridge comprising a first serpentine resistor, a second serpentine resistor, a third serpentine resistor, and a fourth serpentine resistor. The sensor also comprises a second Wheatstone bridge comprising a fifth serpentine resistor, a sixth serpentine resistor, a seventh serpentine resistor, and an eighth serpentine resistor. The serpentine resistors comprise anisotropic magneto-resistive material that changes resistance in response to a change in an applied magnetic field. The sensor also includes a surrounding of anisotropic magneto-resistive material disposed in substantially a same plane as the serpentine resistors, enclosing the serpentine resistors, and electrically isolated from the serpentine resistors. The first Wheatstone bridge, the second Wheatstone bridge, and the surrounding of anisotropic magneto-resistive material are part of a sensor die.