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公开(公告)号：US11973110B2
公开(公告)日：2024-04-30
申请号：US17313748
申请日：2021-05-06
Inventor： Che-Yuan Chang , Hui-Zhong Zhuang , Chih-Liang Chen
CPC classification number: H01L29/0653 , H01L28/40
Abstract: A semiconductor structure includes a substrate and a first capacitor. The substrate includes an active region. The first capacitor is over the substrate and free from overlapping the active region from a top view perspective.
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