公开(公告)号：US11170863B2

公开(公告)日：2021-11-09

申请号：US16921879

申请日：2020-07-06

Applicant: Southern University of Science and Technology

Inventor： Guobiao Zhang ,  Yida Li ,  Xiaodong Xiang ,  Hongyu Yu ,  Yuejin Guo ,  Shengming Zhou ,  Guoxing Zhang ,  Guangzhao Liu ,  Mingtao Hu ,  Wang Zhang ,  Mei Shen

IPC: G11C17/16 ,  G11C29/00 ,  G11C7/14 ,  G11C11/56 ,  G11C13/00 ,  G11C17/18

Abstract: The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAMMB). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.