公开(公告)号：US12290778B2

公开(公告)日：2025-05-06

申请号：US17536048

申请日：2021-11-28

Applicant: Samsung Electronics Co., Ltd. ,  CSK Inc.

Inventor： Seo Young Maeng ,  Il Jun Jeon ,  Su Ji Gim ,  Jin Hong Kim ,  Young Seok Roh ,  Jong Yong Bae ,  Jung Joon Pyeon

IPC: B01D46/76 ,  B01D46/00 ,  B01D46/24 ,  B01D46/64 ,  B01D53/04 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02

Abstract: A method of fabricating a semiconductor device includes providing a wafer inside a process chamber, performing an ALD (atomic layer deposition) process inside the process chamber to deposit titanium nitride on the wafer, providing a process gas used for the ALD process to a scrubber, filtering a first powder contained in the process gas, using a filter unit disposed in the scrubber and including a plurality of filters, adsorbing a second powder remaining in the process gas after passing through the filter unit, using a fin structure extending in a vertical direction inside the filter unit, and exhausting the process gas, from which the first and second powders are removed, from the scrubber.